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BCP53T1 PDF预览

BCP53T1

更新时间: 2024-09-30 22:17:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管光电二极管放大器
页数 文件大小 规格书
4页 80K
描述
MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

BCP53T1 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-261AA包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
Factory Lead Time:1 week风险等级:5.03
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-261AAJESD-30 代码:R-PDSO-G4
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:140 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:PNP
最大功率耗散 (Abs):1.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

BCP53T1 数据手册

 浏览型号BCP53T1的Datasheet PDF文件第2页浏览型号BCP53T1的Datasheet PDF文件第3页浏览型号BCP53T1的Datasheet PDF文件第4页 
Order this document  
by BCP53T1/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
This PNP Silicon Epitaxial transistor is designed for use in audio amplifier  
applications. The device is housed in the SOT-223 package which is designed for  
medium power surface mount applications.  
MEDIUM POWER  
PNP SILICON  
HIGH CURRENT  
TRANSISTOR  
High Current: 1.5 Amps  
NPN Complement is BCP56  
SURFACE MOUNT  
The SOT-223 Package can be soldered using wave or reflow. The formed leads  
absorb thermal stress during soldering, eliminating the possibility of damage to  
the die  
4
COLLECTOR 2,4  
Available in 12 mm Tape and Reel  
Use BCP53T1 to order the 7 inch/1000 unit reel.  
Use BCP53T3 to order the 13 inch/4000 unit reel.  
1
2
3
BASE  
1
CASE 318E-04, STYLE 1  
TO-261AA  
EMITTER 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
CBO  
V
EBO  
80  
–100  
5.0  
1.5  
Collector Current  
I
C
(1)  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watts  
mW/°C  
A
Operating and Storage Temperature Range  
DEVICE MARKING  
T , T  
65 to 150  
°C  
J
stg  
AH  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance — Junction-to-Ambient (surface mounted)  
R
83.3  
°C/W  
θJA  
Lead Temperature for Soldering, 0.0625from case  
Time in Solder Bath  
T
L
260  
10  
°C  
Sec  
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1996  

BCP53T1 替代型号

型号 品牌 替代类型 描述 数据表
BCP52 ONSEMI

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