生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.11 | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 50 MHz |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCP52TRL13 | YAGEO |
获取价格 |
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | |
BCP52TRL13 | NXP |
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1A, 60V, PNP, Si, POWER TRANSISTOR | |
BCP53 | NXP |
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PNP medium power transistors | |
BCP53 | INFINEON |
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PNP Silicon AF Transistors (For AF driver and output stages High collector current) | |
BCP53 | WINNERJOIN |
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TRANSISTOR (PNP) | |
BCP53 | TYSEMI |
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High collector current 1.3 W power dissipation.Collector current IC -1 A | |
BCP53 | ONSEMI |
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PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT | |
BCP53 | KEXIN |
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PNP Medium Power Transistors | |
BCP53 | SECOS |
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PNP Silicon Medium Power Transistor | |
BCP53 | NEXPERIA |
获取价格 |
80 V, 1 A PNP medium power transistorProduction |