BCP51,52,53
SOT-223 Transistor(PNP)
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
1
Features
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP54...BCP56 (NPN)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
BCP51
BCP52
-60
-60
-5
BCP53
-100
Units
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
-45
V
V
V
A
-45
-80
-1
PC
Collector Power Dissipation
1.5
94
W
℃/W
℃
RθJA
Tstg
Thermal Resistance Junction to Ambient
Storage Temperature Range
-65to+150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
V
Collector-base breakdown voltage
BCP51
BCP52
BCP53
-45
-60
-100
-45
-60
-80
V(BR)CBO
IC=- 0.1mA,IE=0
Collector-emitter breakdown voltage
BCP51
BCP52
BCP53
V(BR)CEO
IC= -10mA,IB=0
V
Base-emitter breakdown voltage
Collector cut-off current
V(BR)EBO
ICBO
IC= -10μA,IE=0
-5
V
VCB= -30 V, IE=0
-100
250
nA
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE
VCE=-2V, IC=-5mA
VCE= -2V, IC=-150m A
VCE= -2V, IC=-500m A
IC=-500mA,IB=-50mA
VCE=-2V, IC=-500m A
25
63
25
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
-0.5
-1
V
V
Transition frequency
fT
VCE=-10V,IC=-50mA,f=100MHz
100
MHz
CLASSIFICATION OF hFE(2)
BCP51-10, BCP52-10, BCP53-10
63-160
BCP51-16, BCP52-16, BCP53-16
100-250
Rank
Range
http://www.lgesemi.com
mail:lge@lgesemi.com
Revision:20170701-P1