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BCP53 PDF预览

BCP53

更新时间: 2024-01-10 00:08:32
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 放大器功率放大器
页数 文件大小 规格书
4页 74K
描述
MEDIUM POWER AMPLIFIER

BCP53 技术参数

生命周期:Active零件包装代码:SC-73
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantFactory Lead Time:4 weeks
风险等级:1.51外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):63
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
参考标准:AEC-Q101; IEC-60134表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):140 MHz
Base Number Matches:1

BCP53 数据手册

 浏览型号BCP53的Datasheet PDF文件第2页浏览型号BCP53的Datasheet PDF文件第3页浏览型号BCP53的Datasheet PDF文件第4页 
BCP52/53  
MEDIUM POWER AMPLIFIER  
ADVANCE DATA  
SILICON EPITAXIAL PLANAR PNP  
TRANSISTORS  
MINIATURE PLASTIC PACKAGE FOR  
APPLICATION IN SURFACE MOUNTING  
CIRCUITS  
GENERAL PURPOSE MAINLY INTENDED  
FOR USE IN MEDIUM POWER INDUSTRIAL  
APPLICATION AND FOR AUDIO AMPLIFIER  
OUTPUT STAGE  
NPN COMPLEMENTS ARE BCP55 AND  
BCP56 RESPECTIVELY  
2
3
2
1
SOT-223  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
BCP52  
-60  
BCP53  
-100  
-80  
VCBO  
VCEO  
VCER  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Collector-Emitter Voltage (RBE = 1K)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
V
V
-60  
-60  
-100  
V
-5  
-1  
V
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
-1.5  
A
IB  
-0.1  
A
IBM  
Base Peak Current (tp < ms)  
-0.2  
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc = 25 C  
2
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/4  
October 1997  

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