5秒后页面跳转
BC857AWT1 PDF预览

BC857AWT1

更新时间: 2024-11-29 22:22:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
8页 254K
描述
CASE 419-02, STYLE 3 SOT-323/SC-70

BC857AWT1 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
风险等级:5.31Is Samacsys:N
最大集电极电流 (IC):0.1 A基于收集器的最大容量:4.5 pF
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):125JESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP功耗环境最大值:0.15 W
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:0.65 V
Base Number Matches:1

BC857AWT1 数据手册

 浏览型号BC857AWT1的Datasheet PDF文件第2页浏览型号BC857AWT1的Datasheet PDF文件第3页浏览型号BC857AWT1的Datasheet PDF文件第4页浏览型号BC857AWT1的Datasheet PDF文件第5页浏览型号BC857AWT1的Datasheet PDF文件第6页浏览型号BC857AWT1的Datasheet PDF文件第7页 
Order this document  
by BC856AWT1/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
3
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT–323/SC–70 which is  
designed for low power surface mount applications.  
1
Motorola Preferred Devices  
BASE  
2
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol BC856 BC857 BC858  
Unit  
V
3
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Collector Current — Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
V
V
V
–65  
–80  
–45  
–50  
–30  
–30  
CEO  
CBO  
EBO  
1
V
2
–5.0  
–100  
–5.0  
–100  
–5.0  
–100  
V
CASE 419–02, STYLE 3  
SOT–323/SC–70  
I
C
mAdc  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board, (1)  
= 25°C  
P
D
150  
mW  
T
A
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
833  
°C/W  
°C  
JA  
T , T  
J stg  
55 to +150  
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;  
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
(I = –10 mA)  
C
BC856 Series  
BC857 Series  
BC858 Series  
V
–65  
–45  
–30  
V
(BR)CEO  
CollectorEmitter Breakdown Voltage  
BC856 Series  
BC857 Series  
BC858 Series  
V
–80  
–50  
–30  
V
V
V
(BR)CES  
(BR)CBO  
(BR)EBO  
(I = –10 µA, V  
C EB  
= 0)  
CollectorBase Breakdown Voltage  
(I = –10 A)  
C
BC856 Series  
BC857 Series  
BC858 Series  
V
V
–80  
–50  
–30  
EmitterBase Breakdown Voltage  
(I = –1.0 A)  
E
BC856 Series  
BC857 Series  
BC858 Series  
–5.0  
–5.0  
–5.0  
Collector Cutoff Current (V  
Collector Cutoff Current (V  
= –30 V)  
= –30 V, T = 150°C)  
I
–15  
–4.0  
nA  
µA  
CB  
CB  
CBO  
A
1. FR–5 = 1.0 x 0.75 x 0.062 in  
Thermal Clad is a registered trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996  

与BC857AWT1相关器件

型号 品牌 获取价格 描述 数据表
BC857AWT3 MOTOROLA

获取价格

100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR
BC857AW-TAPE-13 NXP

获取价格

TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BC857AW-TAPE-7 NXP

获取价格

TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BC857AW-TP MCC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC
BC857A-Z3E ETC

获取价格

SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS
BC857B SECOS

获取价格

BC856A
BC857B INFINEON

获取价格

PNP Silicon AF Transistors (For AF input stages and driver applications High current gain
BC857B GOOD-ARK

获取价格

暂无描述
BC857B MCC

获取价格

PNP Small Signal Transistor 310mW
BC857B HTSEMI

获取价格

TRANSISTOR (PNP)