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BC857B PDF预览

BC857B

更新时间: 2024-11-29 22:54:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
5页 43K
描述
PNP General Purpose Amplifier

BC857B 数据手册

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BC857A  
BC857B  
BC857C  
C
E
B
SOT-23  
Mark: 3E / 3F / 3G  
PNP General Purpose Amplifier  
This device is designed for general purpose amplifier applications  
at collector currents to 300 mA. Sourced from Process 68.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
45  
50  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
500  
mA  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
*BC857A / B / C  
PD  
Total Device Dissipation  
Derate above 25 C  
350  
2.8  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Ambient  
357  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.  
ã 1997 Fairchild Semiconductor Corporation  

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