Datasheet > BC857B_11

BC857B_11

更新时间： 2024-12-01 08:49:55

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	988K
描述
PNP small signal transistor

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中文翻译

获取价格

数据手册

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BC857B_11 数据手册

PNP small signal transistor

BC857B

Features

Dimensions (Unit : mm)

1) Ideal for switching and AF amplifier applications.

2) High current gain.

BC857B

2.9

0.4

0.95

0.45

( )

Packaging specifications

Package

Taping

T116

(

)

(

)

Type

Code

0.95

0.15

1.9

Basic ordering unit (pieces)

3000

(1)Emitter

(2)Base

BC857B

Each lead has same dimensions

Abbreviated symbol : G3F

(3)Collector

Absolute maximum ratings (Ta=25C)

Parameter

Symbol

Limits

−50

−45

−5

Unit

VCBO

VCEO

VEBO

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

−0.1

0.20

0.35

150

°C

Collector power dissipation

∗

Junction temperature

Storage temperature

Tstg

−65 to 150

°C

Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE

∗

Electrical characteristics (Ta=25C)

Parameter

Symbol Min.

Typ.

−

Max.

Unit

Conditions

Collector-emitter breakdown voltage BV^CEO

−45

−50

−5

−

= −1mA

= −50

CB= −30V

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector-base cutoff current

BVCBO

BVEBO

−

μA

CBO

−

−0.015

−0.3

−0.65

−0.75

480

−

μA

CE(sat1)

CE(sat2)

−

= −10mA/ −0.5mA

= −100mA/ −5mA

Collector-emitter saturation voltage

−

−0.6

210

−

CE= −5V, I

CE= 5V, I = −2mA

CE= −5V, I = 20mA, f=100MHz

C= −10mA

Base-emitter voltage

VBE(on)

−

DC current transfer ratio

Transition frequency

−

250

−

MHz

−

4.5

CB= −10V, f=1MHz

CB= −30V

Collector outpu capacitance

Collector-base cutoff current

Cob

−

−4

μA

CBO

www.rohm.com

2011.11 - Rev.B

1/2

12 3

中文翻译

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