5秒后页面跳转
BC857B PDF预览

BC857B

更新时间: 2024-02-08 09:14:57
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
3页 259K
描述
BC856A

BC857B 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
风险等级:5.55Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):125
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC857B 数据手册

 浏览型号BC857B的Datasheet PDF文件第2页浏览型号BC857B的Datasheet PDF文件第3页 
BC856A, B  
BC857A, B, C  
BC858A, B, C  
Elektronische Bauelemente  
A suffix of "-C" specifies halogen & lead-free  
FEATURES  
SOT-23  
Min  
n
n
n
n
A
L
General Purpose Transistor PNP Type  
Collect current : - 0.1A  
Dim  
A
Max  
2.800 3.040  
1.200 1.400  
0.890 1.110  
0.370 0.500  
1.780 2.040  
0.013 0.100  
0.085 0.177  
0.450 0.600  
0.890 1.020  
2.100 2.500  
0.450 0.600  
O
O
Operating Temp. : -55 C ~ +150 C  
B
3
S
C
Top View  
B
RoHS compliant product  
C
1
2
D
V
G
G
H
COLLE CTOR  
3
3
J
1
K
1
H
J
D
BAS E  
K
L
2
S
V
2
E MITTE R  
All Dimension in mm  
ELECTRICAL CHARACTERISTICS˄Tamb=25ć  
unless otherwise specified˅  
Parameter  
Symbol  
Test conditions  
MIN  
MAX  
UNIT  
Collector-base breakdown voltage  
BC856  
BC857  
BC858  
BC856  
BC857  
BC858  
-80  
-50  
-30  
-65  
-45  
-30  
VCBO  
V
Ic= -10­Aˈ IE=0  
Collector-emitter breakdown voltage  
VCEO  
VEBO  
ICBO  
Ic= -10 mAˈ IB=0  
V
V
Emitter-base breakdown voltage  
Collector cut-off current  
-5  
IE= -10 ­Aˈ IC=0  
BC856  
BC857  
BC858  
BC856  
BC857  
BC858  
VCB= -70 V , IE=0  
VCB= -45 V , IE=0  
-0.1  
­A  
VCB= -25 V , IE=0  
VCE= -60 V , IB=0  
VCE= -40 V , IB=0  
VCE= -25 V , IB=0  
Collector cut-off current  
ICEO  
IEBO  
HFE  
-0.1  
-0.1  
­A  
­A  
Emitter cut-off current  
VEB= -5 V ,  
IC=0  
DC current gain  
BC856A,857A,858A  
BC856B,857B,858B  
BC857C,BC858C  
125  
220  
420  
250  
475  
800  
VCE= -5V, IC= -2mA  
˄
1
˅
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
V
CE(sat)  
BE(sat)  
IC=-100mA, IB= -5 mA  
-0.5  
-1.1  
V
V
V
IC= -100 mA, IB= -5mA  
VCE= -5 V, IC= -10mA  
Transition frequency  
100  
MHz  
fT  
f=100MHz  
DEVICE MARKING  
BC856A=3A; BC856B=3B; BC857A=3E; BC857B=3F; BC857C=3G; BC858A=3J; BC858B=3K; BC858C=3L  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2004 Rev. B  
Page 1 of 3  

与BC857B相关器件

型号 品牌 获取价格 描述 数据表
BC857B,215 ETC

获取价格

TRANS PNP 45V 0.1A SOT23
BC857B,235 ETC

获取价格

TRANS PNP 45V 0.1A SOT23
BC857B,315 NXP

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236A
BC857B/DG/B3,215 ETC

获取价格

TRANS GEN PURPOSE TO-236AB
BC857B/E8 ETC

获取价格

TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 100MA I(C) | SOT-23
BC857B/E9 ETC

获取价格

TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 100MA I(C) | SOT-23
BC857B/T1 ETC

获取价格

TRANSISTOR SMD KLEINSIGNAL UNIVERSAL
BC857B/T3 NXP

获取价格

TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SST3, SMD, 3
BC857B/T4 NXP

获取价格

TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SST3, SMD, 3
BC857B_11 ROHM

获取价格

PNP small signal transistor