Datasheet > BC857B

BC857B

更新时间： 2024-11-30 06:41:39

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
6页	1006K
描述
PNP Dual General Purpose Transistors

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中文翻译

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数据手册

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BC857B 数据手册

BC856BDW Series

PNP Dual General Purpose Transistors

P b

Lead(Pb)-Free

PNP+PNP

SOT-363(SC-88)

Maximum Ratings

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Symbol

BC856

BC857

BC858

Unit

CEO

CBO

5.0

100

5.0

Emitter-Base Voltage

EBO

100

Collector Current-Continuous

100

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Total Device Dissipation Per Device

380

250

3.0

FR-5 Board(1)T = 25°C

mW/ °C

Derate Above 25°C

Thermal Resistance, Junction to Ambient

328

+150

°C/W

°C

θJA

Junction Temperature Range

Storage Temperature Range

Tstg

-55 to +150

°C

Note : FR-5=1.0 x 0.75 x 0.062 inch

Device Marking

BC856BDW=3B , BC857BDW=3F , BC857CDW=3G , BC858BDW=3K , BC858CDW=3L

WEITRON

http://www.weitron.com.tw

1/6

14-Nov-07

12 3 4 5 6

中文翻译

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