Datasheet > BC856SQ62702C2532

BC856SQ62702C2532

更新时间： 2024-11-19 23:34:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
6页	45K
描述
TRANSISTOR SOT363

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BC856SQ62702C2532 数据手册

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BC 856S

PNP Silicon AF Transistor Array

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Two ( galvanic) internal isolated Transistors

with high matching in one package

VPS05604

Type

Marking Ordering Code Pin Configuration

3Ds

Package

BC 856S

Q62702-C2532 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

DC collector current

Peak collector current

CEO

CBO

CES

EBO

100

200

Total power dissipation, T = 115 °C

250

°C

tot

Junction temperature

Storage temperature

150

- 65...+150

stg

Thermal Resistance

Junction ambient

≤275

≤140

K/W

thJA

thJS

Junction - soldering point

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm Cu

Semiconductor Group

Ma -12-1998

1998-11-01

Semiconductor Group

12 3 4 5 6

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