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BC856T

更新时间: 2024-11-05 08:49:55
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 345K
描述
SURFACE MOUNT PNP SILICON TRANSISTOR

BC856T 数据手册

 浏览型号BC856T的Datasheet PDF文件第2页 
BC856T SERIES  
BC857T SERIES  
www.centralsemi.com  
SURFACE MOUNT  
PNP SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BC856T and  
BC857T Series types are PNP Silicon Transistors  
manufactured by the epitaxial planar process, epoxy  
molded in a surface mount package, designed for  
general purpose switching and amplifier applications.  
MARKING CODE: SEE MARKING CODE TABLE  
ON FOLLOWING PAGE  
SOT-523 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
BC857T  
50  
BC856T  
80  
UNITS  
V
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Peak Base Current  
Power Dissipation  
Operating and Storage Junction Temperature  
Thermal Resistance  
V
V
V
CBO  
CEO  
EBO  
C
CM  
45  
65  
5.0  
100  
200  
100  
250  
V
I
mA  
mA  
mA  
mW  
°C  
I
I
BM  
P
D
T , T  
-65 to +150  
500  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
nA  
μA  
nA  
V
V
V
V
V
V
V
V
V
MHz  
pF  
pF  
I
I
I
V
V
V
=30V  
=30V, T =150°C  
=5.0V  
15  
5.0  
100  
CBO  
CBO  
EBO  
CB  
CB  
EB  
A
BV  
BV  
BV  
BV  
BV  
I =10μA (BC857T)  
50  
80  
45  
65  
5.0  
CBO  
CBO  
CEO  
CEO  
EBO  
C
I =10μA (BC856T)  
C
I =10mA (BC857T)  
C
I =10mA (BC856T)  
C
I =10μA  
E
V
V
V
V
I =10mA, I =0.5mA  
0.20  
0.40  
0.70  
0.77  
CE(SAT)  
CE(SAT)  
BE(ON)  
BE(ON)  
C
B
B
CE  
CE  
I =100mA, I =5.0mA  
C
I =2.0mA, V =5.0V  
0.58  
100  
C
I =10mA, V =5.0V  
C
f
V
=5.0V, I =10mA, f=100MHz  
T
CE  
CB  
EB  
CE  
C
C
C
V
V
V
=10V, I =0, f=1.0MHz  
2.5  
c
e
E
=0.5V, I =0, f=1.0MHz  
10  
C
NF  
=5.0V, I =200μA,  
C
R =2.0KΩ, f=1.0KHz, BW=200Hz  
10  
dB  
S
BC856AT  
BC857AT  
MIN  
125  
MAX  
250  
h
V
=5.0V, I =2.0mA  
FE  
CE  
C
R1 (20-November 2009)  

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