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BC856T

更新时间: 2024-11-04 22:54:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
6页 149K
描述
PNP Silicon AF Transistor

BC856T 数据手册

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BC856T  
PNP Silicon AF Transistor  
Preliminary data  
3
For AF input stages and driver applications  
High current gain  
Low collector-emitter saturation voltage  
Complementary types: BC 846T  
2
1
VPS05996  
Type  
BC856AT  
BC856BT  
Marking  
3As  
3Bs  
Pin Configuration  
Package  
SC75  
SC75  
1 = B  
1 = B  
2 = E  
3 = C  
2 = E  
3 = C  
Maximum Ratings  
Parameter  
Collector-emitter voltage  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
DC collector current  
Symbol  
Value  
65  
80  
Unit  
V
V
CEO  
V
CBO  
V
80  
5
100  
200  
250  
150  
CES  
V
EBO  
I
mA  
mA  
mW  
°C  
C
Peak collector current  
I
CM  
P
Total power dissipation, T = 109 °C  
Junction temperature  
tot  
S
T
j
Storage temperature  
T
-65 ... 150  
stg  
Thermal Resistance  
Junction - soldering point  
1)  
R
165  
K/W  
thJS  
1
For calculation of R  
thJA  
please refer to Application Note Thermal Resistance  
1
Jan-08-2002  

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