Datasheet > BC856W

BC856W

更新时间： 2025-08-02 08:49:55

品牌	Logo	应用领域
强茂 - PANJIT		晶体晶体管开关光电二极管
页数	文件大小	规格书
4页	86K
描述
PNP GENERAL PURPOSE TRANSISTORS

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中文翻译

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数据手册

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BC856W 数据手册

BC856AW ~ BC859CW

PNP GENERAL PURPOSE TRANSISTORS

CURRENT

200 mWatts

30/45/65 Volts

VOLTAGE

FEATURES

• General purpose amplifier applications

• PNP epitaxial silicon, planar design

• Collector current I_C= 100mA

0.087(2.20)

0.070(1.80)

• Complimentary (NPN) Devices:BC846W/BC847W/BC848W/

BC849W Series

0.054(1.35)

0.045(1.15)

• In compliance with EU RoHS 2002/95/EC directives

0.006(0.15)

0.002(0.05)

0.056(1.40)

0.047(1.20)

MECHANICALDATA

• Case: SOT-323, Plastic

0.004(0.10)MAX.

0.044(1.10)

0.035(0.90)

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 0.0001 ounce, 0.005 gram

0.016(0.40)

0.008(0.20)

Device Marking:

BC856AW=56A BC857AW=57A BC858AW=58A

BC856BW=56B BC857BW=57B BC858BW=58B

BC859BW=59B

BC857CW=57C BC858CW=58C BC859CW=59C

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Symbol

V_CEO

Value

Units

BC856W

BC857W

BC858W, BC859W

-65

-45

-30

Collector - Emitter Voltage

Collector - Base Voltage

Emitter - Base Voltage

BC856W

BC857W

BC858W, BC859W

-80

-50

-30

V_CBO

BC856W

BC857W

6.0

V_EBO

BC858W, BC859W

-5.0

Collector Current - Continuous

Max Power Dissipation (Note 1)

Storage Temperature Range

Junction Temperature Range

I _C

P_TOT

T_STG

T_J

-100

200

^OC

-55 to 150

^OC

December 17,2010-REV.00

PAGE . 1

12 3 4

中文翻译

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