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BC856_10

更新时间: 2024-09-25 12:50:19
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 331K
描述
SURFACE MOUNT PNP SILICON TRANSISTOR

BC856_10 数据手册

 浏览型号BC856_10的Datasheet PDF文件第2页 
BC856 SERIES  
BC857 SERIES  
BC858 SERIES  
www.centralsemi.com  
DESCRIPTION:  
SURFACE MOUNT  
The CENTRAL SEMICONDUCTOR BC856, BC857  
and BC858 Series types are PNP Silicon Transistors  
manufactured by the epitaxial planar process, epoxy  
molded in a surface mount package, designed for  
general purpose switching and amplifier applications.  
PNP SILICON TRANSISTOR  
MARKING CODE: SEE MARKING CODE TABLE  
ON FOLLOWING PAGE  
Note: Reverse Lead Codes Available, Add “R” to the end of  
the Part # and Marking Code.  
SOT-23 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
BC858  
30  
30  
BC857  
50  
45  
5.0  
100  
200  
200  
350  
BC856  
80  
65  
UNITS  
V
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Peak Base Current  
Power Dissipation  
Operating and Storage Junction Temperature  
Thermal Resistance  
V
V
V
CBO  
CEO  
EBO  
C
CM  
V
I
mA  
mA  
mA  
mW  
°C  
I
I
BM  
P
D
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
15  
4.0  
UNITS  
nA  
μA  
nA  
V
V
V
V
V
V
V
I
I
I
V
V
V
=30V  
=30V, T =150°C  
=5.0V  
CBO  
CBO  
EBO  
CB  
CB  
EB  
A
100  
BV  
BV  
BV  
BV  
BV  
BV  
BV  
I =10μA (BC858)  
30  
50  
80  
30  
45  
65  
5.0  
CBO  
CBO  
CBO  
CEO  
CEO  
CEO  
EBO  
C
I =10μA (BC857)  
C
I =10μA (BC856)  
C
I =10mA (BC858)  
C
I =10mA (BC857)  
C
I =10mA (BC856)  
C
I =10μA  
E
V
V
V
V
I =10mA, I =0.5mA  
0.30  
0.65  
0.75  
0.82  
V
V
V
V
CE(SAT)  
CE(SAT)  
BE(ON)  
BE(ON)  
C
B
B
CE  
CE  
I =100mA, I =5.0mA  
C
I =2.0mA, V =5.0V  
0.6  
C
I =10mA, V =5.0V  
C
f
V
=5.0V, I =10mA, f=100MHz  
100  
MHz  
T
CE  
CE  
C
NF  
V
=5.0V, I =200μA,  
C
R =2.0KΩ, f=1.0KHz, BW=200Hz  
10  
dB  
S
BC856A  
BC857A  
BC858A  
BC856B  
BC857B  
BC858B  
BC857C  
BC858C  
MIN MAX  
125 250  
MIN MAX  
220 475  
MIN MAX  
h
V
=5.0V, I =2.0mA  
420  
800  
FE  
CE  
C
R2 (20-November 2009)  

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