BC856W_11 PDF预览

BC856W_11

更新时间: 2025-08-01 08:49:55
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体晶体管
页数 文件大小 规格书
2页 96K
描述
Surface Mount General Purpose Si-Epi-Planar Transistors

BC856W_11 数据手册

 浏览型号BC856W_11的Datasheet PDF文件第2页 
BC856W ... BC859W  
BC856W ... BC859W  
Surface Mount General Purpose Si-Epi-Planar Transistors  
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage  
PNP  
PNP  
Version 2011-07-11  
Power dissipation – Verlustleistung  
200 mW  
SOT-323  
2±0.1  
1±0.1  
Plastic case  
0.3  
3
Kunststoffgehäuse  
Type  
Code  
Weight approx. – Gewicht ca.  
0.01 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
1
2
1.3  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions - Maße [mm]  
1 = B 2 = E 3 = C  
Maximum ratings (TA = 25°C)  
Grenzwerte (TA = 25°C)  
BC858W  
BC856W BC857W  
BC859W  
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open  
- VCEO  
- VCBO  
- VEBO  
Ptot  
65 V  
80 V  
45 V  
50 V  
30 V  
Collector-Base-voltage – Kollektor-Basis-Spannung  
Emitter-Base-voltage – Emitter-Basis-Spannung  
Power dissipation – Verlustleistung  
E open  
C open  
30 V  
5 V  
200 mW 1)  
100 mA  
200 mA  
200 mA  
200 mA  
Collector current – Kollektorstrom (dc)  
- IC  
Peak Collector current – Kollektor-Spitzenstrom  
Peak Base current – Basis-Spitzenstrom  
Peak Emitter current – Emitter-Spitzenstrom  
- ICM  
- IBM  
IEM  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-55...+150°C  
-55…+150°C  
Characteristics (Tj = 25°C)  
Kennwerte (Tj = 25°C)  
Min.  
Typ.  
Max.  
DC current gain – Kollektor-Basis-Stromverhältnis  
- VCE = 5 V, - IC = 10 µA  
Group A  
Group B  
Group C  
HFE  
hFE  
hFE  
140  
250  
480  
- VCE = 5 V, - IC = 2 mA  
Group A  
Group B  
Group C  
HFE  
hFE  
hFE  
125  
220  
420  
180  
290  
520  
250  
475  
800  
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)  
- IC = 10 mA, - IB = 0.5 mA  
- IC = 100 mA, - IB = 5 mA  
- VCEsat  
- VCEsat  
75 mV  
250 mV  
300 mV  
650 mV  
1
2
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss  
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 

与BC856W_11相关器件

型号 品牌 获取价格 描述 数据表
BC856_06 FAIRCHILD

获取价格

PNP Epitaxial Silicon Transistor
BC856_08 INFINEON

获取价格

PNP Silicon AF Transistor
BC856_09 PANJIT

获取价格

PNP GENERAL PURPOSE TRANSISTORS
BC856_10 CENTRAL

获取价格

SURFACE MOUNT PNP SILICON TRANSISTOR
BC856_11 DIOTEC

获取价格

Surface Mount General Purpose Si-Epi-Planar Transistors
BC856_11 UTC

获取价格

SWITCHING AND AMPLIFIER APPLICATIONS
BC857 CENTRAL

获取价格

SURFACE MOUNT PNP SILICON TRANSISTOR
BC857 ZETEX

获取价格

SOT23 NPN SILICON PLANAR
BC857 STMICROELECTRONICS

获取价格

SMALL SIGNAL PNP TRANSISTORS
BC857 VISHAY

获取价格

Small Signal Transistors (PNP)