BC857

更新时间： 2024-11-27 06:41:39

品牌	Logo	应用领域
RECTRON		晶体晶体管
页数	文件大小	规格书
2页	80K
描述
PNP Silicon Planar Epitaxial Transistors

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中文翻译

获取价格

数据手册

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BC857 数据手册

BC856

BC857

BC858

PNP Silicon Planar Epitaxial Transistors

Pin configuration:

1. BASE

2. EMITTER

3. COLLECTOR

Unit: inch (mm)

Absolute Maximum Ratings (Ta = 25 ^oC unless specified otherwise)

SYMBOL

V_CBO

V_CEX

V_CEO

V_EBO

I_C

BC856

BC857

100

200

BC858

UNITS

DESCRIPTION

Collector Base Voltage

Collector Emmitter Voltage (+V_BE= 1V)

Collector Emitter Voltage

Emitter Base Voltage

Collector Current (DC)

Collector Current - Peak

Emitter Current - Peak

Base Current - Peak

I_CM

I_EM

I_BM

Total power dissipation up to

P_tot**

250

_amb= 60 ^oC

^oC

Tstg

-55 to +150

150

Storge Temperature

Junction Temperature

Thermal Resistance

From junction to tab

R_th(j-t)

R_th(t-s)

R_th(s-a)**

280

K/W

From tab to soldering points

From soldering points to ambient

**Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm

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