Datasheet > BC850CMTF_11

BC850CMTF_11

更新时间： 2024-09-15 12:51:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	142K
描述
NPN Epitaxial Silicon Transistor

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数据手册

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BC850CMTF_11 数据手册

April 2011

BC846 - BC850

NPN Epitaxial Silicon Transistor

Features

• Switching and Amplifier Applications

• Suitable for automatic insertion in thick and thin-film circuits

• Low Noise: BC849, BC850

• Complement to BC856 ... BC860

SOT-23

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings* T_a= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

: BC846

: BC847/850

: BC848/849

Collector-Emitter Voltage : BC846

: BC847/850

V_CEO

: BC848/849

V_EBO

Emitter-Base Voltage

: BC846/847

: BC848/849/850

I_C

P_C

Collector Current (DC)

100

310

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

T_J

150

T_STG

-65 to 150

°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics* T_a= 25°C unless otherwise noted

Symbol

I_CBO

Parameter

Collector Cut-off Current

DC Current Gain

Test Condition

V_CB=30V, I_E=0

V_CE=5V, I_C=2mA

Min.

Typ. Max. Units

h_FE

110

800

V_CE(sat) Collector-Emitter Saturation Voltage I_C=10mA, I_B=0.5mA

I_C=100mA, I_B=5mA

200

250

600

V_BE(sat) Collector-Base Saturation Voltage

I_C=10mA, I_B=0.5mA

I_C=100mA, I_B=5mA

700

900

V_BE(on) Base-Emitter On Voltage

V_CE=5V, I_C=2mA

V_CE=5V, I_C=10mA

580

660

700

720

f_T

Current Gain Bandwidth Product

Output Capacitance

V_CE=5V, I_C=10mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

V_EB=0.5V, I_C=0, f=1MHz

300

3.5

MHz

C_ob

C_ib

Input Capacitance

Noise Figure

: BC846/847/848

: BC849/850

V_CE= 5V, I_C= 200μA

R_G=2KΩ, f=1KHz

1.2

: BC849

: BC850

V_CE= 5V, I_C= 200μA

R_G=2KΩ, f=30~15000Hz

1.4

* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

BC846 - BC850 Rev. B1

www.fairchildsemi.com

12 3 4 5

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