Datasheet > BC850C-Q

BC850C-Q

更新时间： 2024-11-19 11:12:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
9页	197K
描述
NPN general purpose transistorProduction

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BC850C-Q 数据手册

BC850C-Q

NPN general purpose transistor

25 April 2023

Product data sheet

1. General description

NPN transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.

PNP complement: BC860

2. Features and benefits

•

Low current (max. 100 mA)

•

Low voltage (max. 45 V)

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

General purpose switching and amplification

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

DC current gain

100

h_FE

V_CE= 5 V; I_C= 10 µA; T_j= 25 °C

450

5. Pinning information

Table 2. Pinning information

Symbol

Description

base

Simplified outline

Graphic symbol

emitter

collector

sym123

SOT23

12 3 4 5 6 7...9

中文翻译

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