Datasheet > BC847BM3T5G

BC847BM3T5G

更新时间： 2024-11-15 04:34:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	64K
描述
General Purpose Transistor

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中文翻译

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BC847BM3T5G 数据手册

BC847BM3T5G

Preferred Device

General Purpose Transistor

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−723 package which is

designed for low power surface mount applications.

http://onsemi.com

• This is a Pb−Free Device

COLLECTOR

MAXIMUM RATINGS (T = 25°C)

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Max

Unit

CEO

CBO

EBO

BASE

6.0

100

EMITTER

Collector Current − Continuous

THERMAL CHARACTERISTICS

Characteristic

mAdc

MARKING

DIAGRAM

Symbol

Max

Unit

Total Device Dissipation,

FR−4 Board (Note 1)

SOT−723

CASE 631AA

STYLE 1

260

1F M

T = 25°C

Derated above 25°C

2.0

mW/°C

°C/W

Thermal Resistance,

Junction−to−Ambient (Note 1)

480

1F = Device Code

M = Date Code

Total Device Dissipation,

FR−4 Board (Note 2)

T = 25°C

600

ORDERING INFORMATION

Derated above 25°C

4.8

mW/°C

°C/W

†

Device

Package

Shipping

Thermal Resistance,

Junction−to−Ambient (Note 2)

205

BC847BM3T5G

SOT−723

8000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Junction and Storage

Temperature Range

T , T

−55 to +150

°C

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 × 1.0 Inch Pad

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

March, 2005 − Rev. 0

BC847BM3/D

12 3 4 5 6

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