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BC847BPDXV6T1_05

更新时间： 2024-11-16 06:41:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 77K
描述
Dual General Purpose Transistor

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BC847BPDXV6T1_05 数据手册

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BC847BPDXV6T1,  
BC847BPDXV6T5  
Dual General Purpose  
Transistor  
NPN/PNP Dual (Complementary)  
http://onsemi.com  
This transistor is designed for general purpose amplifier  
applications. It is housed in the SOT−563 which is designed for low  
power surface mount applications.  
(3)  
(2)  
(1)  
Q
• Lead−Free Solder Plating  
MAXIMUM RATINGS − NPN  
Q
1
2
Rating  
Symbol  
Value  
45  
Unit  
V
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
V
CEO  
V
CBO  
V
EBO  
(4)  
(5)  
(6)  
50  
V
BC847BPDX6T1  
6.0  
V
Collector Current −  
Continuous  
I
C
100  
mAdc  
4
5
6
MAXIMUM RATINGS − PNP  
Rating  
3
2
1
Symbol  
Value  
−45  
Unit  
V
SOT−563  
CASE 463A  
PLASTIC  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
V
CEO  
V
CBO  
V
EBO  
−50  
V
−5.0  
−100  
V
MARKING DIAGRAM  
Collector Current −  
Continuous  
I
C
mAdc  
4F MG  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
G
1
4F = Specific Device Code  
M
= Month Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
THERMAL CHARACTERISTICS  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
ORDERING INFORMATION  
Total Device Dissipation T = 25°C  
P
D
357  
(Note 1)  
2.9  
A
mW  
mW/°C  
†
Device  
Package  
Shipping  
Derate above 25°C  
(Note 1)  
BC847BPDXV6T1 SOT−563  
4 mm pitch  
4000/Tape & Reel  
Thermal Resistance −  
Junction-to-Ambient  
R
350  
(Note 1)  
°C/W  
q
JA  
BC847BPDXV6T1G SOT−563  
2 mm pitch  
(Pb−Free) 4000/Tape & Reel  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
BC847BPDXV6T5 SOT−563  
4 mm pitch  
8000/Tape & Reel  
Total Device Dissipation  
P
D
500  
(Note 1)  
4.0  
T = 25°C  
mW  
mW/°C  
A
BC847BPDXV6T5G SOT−563  
2 mm pitch  
(Pb−Free) 8000/Tape & Reel  
Derate above 25°C  
(Note 1)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Thermal Resistance −  
Junction-to-Ambient  
R
250  
(Note 1)  
°C/W  
°C  
q
JA  
Junction and Storage  
Temperature Range  
T , T  
J
−55 to +150  
stg  
1. FR−4 @ Minimum Pad  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 1  
BC847BPDXV6T1/D  
 
12345678

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