Datasheet > BC847BPN2

BC847BPN2

更新时间： 2024-11-14 12:32:23

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
14页	108K
描述
45 V, 100 mA NPN/PNP general-purpose transistor

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BC847BPN2 数据手册

BC847BPN

45 V, 100 mA NPN/PNP general-purpose transistor

Rev. 04 — 18 February 2009

Product data sheet

1. Product proﬁle

1.1 General description

NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88)

Surface-Mounted Device (SMD) plastic package.

1.2 Features

I Low collector capacitance

I Low collector-emitter saturation voltage

I Closely matched current gain

I Reduces number of components and board space

I No mutual interference between the transistors

1.3 Applications

I General-purpose switching and ampliﬁcation

1.4 Quick reference data

Table 1.

Symbol Parameter

Per transistor; for the PNP transistor with negative polarity

Quick reference data

Conditions

Min

Typ

Max

Unit

V_CEO

I_C

collector-emitter voltage open base

collector current

100

450

h_FE

DC current gain

V_CE= 5 V; I_C= 2 mA

200

2. Pinning information

Table 2.

Pinning

Description

emitter TR1

base TR1

Simpliﬁed outline

Graphic symbol

collector TR2

emitter TR2

base TR2

TR2

TR1

collector TR1

sym019

12 3 4 5 6 7...14

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