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BC847BPDXV6_13 PDF预览

BC847BPDXV6_13

更新时间： 2024-11-17 01:17:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 116K
描述
NPN/PNP Dual General Purpose Transistor

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BC847BPDXV6_13 数据手册

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BC847BPDXV6,  
SBC847BPDXV6  
NPN/PNP Dual General  
Purpose Transistor  
This transistor is designed for general purpose amplifier  
applications. It is housed in the SOT−563 which is designed for low  
power surface mount applications.  
http://onsemi.com  
Features  
(3)  
(2)  
(1)  
Q
• S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
Q
1
2
• These Devices are Pb−Free and are RoHS Compliant  
MAXIMUM RATINGS − NPN  
(4)  
(5)  
(6)  
Rating  
Symbol  
Value  
45  
Unit  
V
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
V
CEO  
BC847BPDX6T1  
V
CBO  
V
EBO  
50  
V
4
5
6.0  
V
6
Collector Current −  
Continuous  
I
C
100  
mAdc  
3
2
1
SOT−563  
CASE 463A  
MAXIMUM RATINGS − PNP  
Rating  
Symbol  
Value  
−45  
Unit  
V
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
V
CEO  
V
CBO  
V
EBO  
MARKING DIAGRAM  
−50  
V
−5.0  
−100  
V
4F MG  
G
Collector Current −  
Continuous  
I
C
mAdc  
1
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
4F = Specific Device Code  
M
= Month Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
THERMAL CHARACTERISTICS  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
ORDERING INFORMATION  
Total Device Dissipation (Note 1)  
P
†
D
Device  
Package  
Shipping  
T = 25°C  
357  
2.9  
mW  
mW/°C  
A
BC847BPDXV6T1G SOT−563  
4 mm pitch  
(Pb−Free) 4000/Tape & Reel  
Derate above 25°C  
Thermal Resistance −  
R
°C/W  
q
JA  
Junction-to-Ambient (Note 1)  
350  
SBC847BPDXV6T1G SOT−563  
2 mm pitch  
(Pb−Free) 4000/Tape & Reel  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
BC847BPDXV6T5G SOT−563  
2 mm pitch  
(Pb−Free) 8000/Tape & Reel  
Total Device Dissipation (Note 1)  
P
D
T = 25°C  
Derate above 25°C  
500  
4.0  
mW  
mW/°C  
A
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Thermal Resistance −  
Junction-to-Ambient (Note 1)  
R
°C/W  
q
JA  
250  
Junction and Storage Temperature Range T , T  
−55 to  
°C  
J
stg  
+150  
1. FR−4 @ Minimum Pad  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
May, 2013 − Rev. 2  
BC847BPDXV6T1/D  
 
123456

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