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BC847BPDXV6_13 PDF预览

BC847BPDXV6_13

更新时间: 2024-02-14 21:31:56
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 116K
描述
NPN/PNP Dual General Purpose Transistor

BC847BPDXV6_13 数据手册

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BC847BPDXV6,  
SBC847BPDXV6  
NPN/PNP Dual General  
Purpose Transistor  
This transistor is designed for general purpose amplifier  
applications. It is housed in the SOT563 which is designed for low  
power surface mount applications.  
http://onsemi.com  
Features  
(3)  
(2)  
(1)  
Q
S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AECQ101 Qualified and  
PPAP Capable  
Q
1
2
These Devices are PbFree and are RoHS Compliant  
MAXIMUM RATINGS NPN  
(4)  
(5)  
(6)  
Rating  
Symbol  
Value  
45  
Unit  
V
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CEO  
BC847BPDX6T1  
V
CBO  
V
EBO  
50  
V
4
5
6.0  
V
6
Collector Current −  
Continuous  
I
C
100  
mAdc  
3
2
1
SOT563  
CASE 463A  
MAXIMUM RATINGS PNP  
Rating  
Symbol  
Value  
45  
Unit  
V
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CEO  
V
CBO  
V
EBO  
MARKING DIAGRAM  
50  
V
5.0  
100  
V
4F MG  
G
Collector Current −  
Continuous  
I
C
mAdc  
1
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
4F = Specific Device Code  
M
= Month Code  
G
= PbFree Package  
(Note: Microdot may be in either location)  
THERMAL CHARACTERISTICS  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
ORDERING INFORMATION  
Total Device Dissipation (Note 1)  
P
D
Device  
Package  
Shipping  
T = 25°C  
357  
2.9  
mW  
mW/°C  
A
BC847BPDXV6T1G SOT563  
4 mm pitch  
(PbFree) 4000/Tape & Reel  
Derate above 25°C  
Thermal Resistance −  
R
°C/W  
q
JA  
Junction-to-Ambient (Note 1)  
350  
SBC847BPDXV6T1G SOT563  
2 mm pitch  
(PbFree) 4000/Tape & Reel  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
BC847BPDXV6T5G SOT563  
2 mm pitch  
(PbFree) 8000/Tape & Reel  
Total Device Dissipation (Note 1)  
P
D
T = 25°C  
Derate above 25°C  
500  
4.0  
mW  
mW/°C  
A
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Thermal Resistance −  
Junction-to-Ambient (Note 1)  
R
°C/W  
q
JA  
250  
Junction and Storage Temperature Range T , T  
55 to  
°C  
J
stg  
+150  
1. FR4 @ Minimum Pad  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
May, 2013 Rev. 2  
BC847BPDXV6T1/D  
 

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