Datasheet > BC817RAPN

BC817RAPN

更新时间： 2024-11-12 11:13:59

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	278K
描述
45 V, 500 mA NPN/PNP general-purpose double transistorsProduction

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中文翻译

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技术参数
数据手册

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BC817RAPN 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.55	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
端子面层：	Tin (Sn)	处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

BC817RAPN 数据手册

BC817RAPN

45 V, 500 mA NPN/PNP general-purpose double transistors

14 September 2018

Product data sheet

1. General description

NPN/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268)

Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: BC817RA

PNP/PNP complement: BC807RA

2. Features and benefits

•

Reduces component count

•

Reduces pick and place costs

Low package height of 0.5 mm

AEC-Q101 qualified

3. Applications

•

General-purpose switching and amplification

Mobile applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity

V_CEO

collector-emitter

voltage

open base

I_C

collector current

500

I_CM

h_FE

peak collector current single pulse; t_p≤ 1 ms

DC current gain V_CE= 1 V; I_C= 100 mA; T_amb= 25 °C

160

400

V_CE= 1 V; I_C= 500 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

12 3 4 5 6 7...12

中文翻译

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