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BC817RAZ PDF预览

BC817RAZ

更新时间: 2024-11-11 22:04:19
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
11页 245K
描述
BC817RA/SOT1268/DFN1412-6

BC817RAZ 数据手册

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BC817RA  
45 V, 500 mA NPN/NPN general-purpose double transistors  
14 September 2018  
Product data sheet  
1. General description  
NPN/NPN general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268)  
Surface-Mounted Device (SMD) plastic package.  
PNP/PNP complement: BC807RA  
NPN/PNP complement: BC817RAPN  
2. Features and benefits  
Reduces component count  
Reduces pick and place costs  
Low package height of 0.5 mm  
AEC-Q101 qualified  
3. Applications  
General-purpose switching and amplification  
Mobile applications  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VCEO  
collector-emitter  
voltage  
open base  
-
-
45  
V
IC  
collector current  
-
-
-
-
-
500  
1
mA  
A
ICM  
hFE  
peak collector current single pulse; tp ≤ 1 ms  
DC current gain VCE = 1 V; IC = 100 mA; Tamb = 25 °C  
VCE = 1 V; IC = 500 mA; Tamb = 25 °C  
-
160  
40  
400  
-
[1]  
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02  
 
 
 
 
 

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