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BC817SU_08 PDF预览

BC817SU_08

更新时间: 2024-11-11 06:41:39
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
6页 528K
描述
NPN Silicon AF Transistor

BC817SU_08 数据手册

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BC817SU  
NPN Silicon AF Transistor  
For general AF applications  
High collector current  
High current gain  
4
3
5
2
1
6
Low collector-emitter saturation voltage  
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Type  
BC817SU  
Marking  
B6s  
Pin Configuration  
1=E 2=C 3=C 4=C 5=C 6=B SC74  
Package  
Maximum Ratings  
Parameter  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
Symbol  
Value  
45  
50  
5
500  
1
Unit  
V
V
V
V
CEO  
CBO  
EBO  
mA  
A
I
C
Peak collector current, t 10 ms  
I
p
CM  
100  
200  
1000  
mA  
Base current  
Peak base current  
Total power dissipation-  
I
B
I
BM  
mW  
°C  
P
tot  
T 100°C  
S
150  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
50  
Unit  
K/W  
2)  
R
thJS  
1Pb-containing package may be available upon special request  
2For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
1
2008-10-20  

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