Datasheet > BC817-40E6433

BC817-40E6433

更新时间： 2022-12-01 19:16:30

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	229K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon

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BC817-40E6433 数据手册

BC817.../BC818...

Base-emitter saturation voltage

Collector cutoff current I

= ƒ(T )

CBO A

I = ƒ(V

), h = 10

= 25 V

BEsat

CBO

BC 817/818

EHP00221

BC 817/818

EHP00222

10⁵

10³

Ι _CBO

Ι _C

150 ˚C

25 ˚C

-50 ˚C

10⁴

10²

max

10³

10²

10¹

typ

10⁰

10¹

10⁰

10^-1

1.0

2.0

3.0

4.0

100

150

˚C

T_A

V_BEsat

Transition frequency f = ƒ(I )

Collector-base capacitance C = ƒ(V )

cb CB

= parameter in V, f = 2 GHz

Emitter-base capacitance C = ƒ(V )

BC817, BC818: - - - , BC817K, BC818K:

eb EB

___

BC 817/818

EHP00218

10³

MHz

f _T

CEB: BC817/BC818

CEB: BC817K/BC818K

CCB: BC817/BC818

CCB: BC817K/BC818K

10²

10¹

10⁰

10¹

10²

mA 10³

10 12 14 16

Ι _C

CB EB

2007-05-18

1...3 4 567 8 9...11

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