5秒后页面跳转
BC817-40E6433 PDF预览

BC817-40E6433

更新时间: 2022-12-01 19:16:30
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 229K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon

BC817-40E6433 数据手册

 浏览型号BC817-40E6433的Datasheet PDF文件第1页浏览型号BC817-40E6433的Datasheet PDF文件第2页浏览型号BC817-40E6433的Datasheet PDF文件第4页浏览型号BC817-40E6433的Datasheet PDF文件第5页浏览型号BC817-40E6433的Datasheet PDF文件第6页浏览型号BC817-40E6433的Datasheet PDF文件第7页 
BC817.../BC818...  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
DC Characteristics  
Collector-emitter breakdown voltage  
V
V
V
V
(BR)CEO  
(BR)CBO  
I = 10 mA, I = 0 , BC817...  
45  
25  
-
-
-
-
C
B
I = 10 mA, I = 0 , BC818...  
C
B
Collector-base breakdown voltage  
I = 10 µA, I = 0 , BC817...  
-
50  
30  
-
-
-
-
C
E
I = 10 µA, I = 0 , BC818...  
C
E
Emitter-base breakdown voltage  
I = 10 µA, I = 0  
5
-
-
V
(BR)EBO  
CBO  
E
C
Collector-base cutoff current  
I
I
µA  
V
V
= 25 V, I = 0  
-
-
-
-
-
-
0.1  
50  
CB  
CB  
E
= 25 V, I = 0 , T = 150 °C  
E
A
100 nA  
Emitter-base cutoff current  
EBO  
V
= 4 V, I = 0  
EB  
C
1)  
-
DC current gain  
h
FE  
I = 100 mA, V = 1 V, h -grp.16  
100  
160  
250  
60  
100  
170  
40  
160  
250  
350  
-
-
-
-
250  
400  
630  
-
-
-
-
C
CE  
FE  
I = 100 mA, V = 1 V, h -grp.25  
C
CE  
FE  
I = 100 mA, V = 1 V, h -grp.40  
C
CE  
FE  
2)  
2)  
2)  
I = 300 mA, V = 1 V, h -grp.16  
C
CE  
FE  
I = 300 mA, V = 1 V, h -grp.25  
C
CE  
FE  
I = 300 mA, V = 1 V, h -grp.40  
C
CE  
FE  
3)  
I = 500 mA, V = 1 V, all h -grps.  
C
CE  
FE  
1)  
Collector-emitter saturation voltage  
I = 500 mA, I = 50 mA  
V
V
-
-
0.7  
V
CEsat  
BEsat  
C
B
1)  
Base emitter saturation voltage  
I = 500 mA, I = 50 mA  
-
-
1.2  
C
B
1
Pulse test: t < 300µs; D < 2%  
2
3
For all BC817 and BC818 subtypes  
For all BC817K and BC818K subtypes  
2007-05-18  
3

与BC817-40E6433相关器件

型号 品牌 获取价格 描述 数据表
BC817-40-GS18 VISHAY

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC
BC817-40HE3 MCC

获取价格

Tape: 3K/Reel , 120K/Ctn;
BC817-40-HF KEXIN

获取价格

NPN Transistors
BC817-40L ONSEMI

获取价格

General Purpose Transistors NPN Silicon Colle
BC817-40L99Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
BC817-40LT1 MOTOROLA

获取价格

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
BC817-40LT1 ONSEMI

获取价格

General Purpose Transistors(NPN Silicon)
BC817-40LT1 LRC

获取价格

General Purpose Transistors(NPN Silicon)
BC817-40LT1 RECTRON

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC
BC817-40LT1 MCC

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC