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BC807-16 PDF预览

BC807-16

更新时间: 2024-11-18 08:49:39
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
2页 409K
描述
PNP Plastic Encapsulate Transistor

BC807-16 数据手册

 浏览型号BC807-16的Datasheet PDF文件第2页 
BC807-16, -25, -40  
-500 mA, -50 V  
PNP Plastic Encapsulate Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen-free & RoHS compliant  
FEATURES  
z
z
z
Ideally suited for automatic insertion  
Epitaxial planar die construction  
Complementary to BC817 (NPN Type)  
SOT-23  
Min  
Collector  
3
Dim  
A
B
C
D
G
H
J
Max  
2.800 3.040  
1.200 1.400  
0.890 1.110  
0.370 0.500  
1.780 2.040  
0.013 0.100  
0.085 0.177  
0.450 0.600  
0.890 1.020  
2.100 2.500  
0.450 0.600  
1
Base  
2
Emitter  
A
MARKING  
L
J
K
BC807-16:5A;  
3
K
L
S
Top View  
B
1
2
BC807-25:5B;  
BC807-40:5C  
C
S
V
G
H
D
V
All Dimension in mm  
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C  
Parameter  
Symbol  
VCBO  
Ratings  
Unit  
V
Collector to Base Voltage  
-50  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCEO  
-45  
V
VEBO  
-5  
-500  
V
IC  
mA  
mW  
Collector Power Dissipation  
Junction, Storage Temperature  
PC  
300  
TJ, TSTG  
+150, -55 ~ +150  
CHARACTERISTICS at Ta = 25°C  
Symbol  
Min.  
Max.  
-
Unit  
V
Test Conditions  
BVCBO  
-50  
IC = -10 uA, IE = 0  
IC = -10 mA, IB = 0  
IE = -1 uA, IC = 0  
VCB = -45V, IE = 0  
VCE = -40V, IB = 0  
VEB = -4V, IC = 0  
BVCEO  
BVEBO  
ICBO  
-45  
-
V
-5  
-
-
V
-0.1  
-0.2  
-0.1  
-0.7  
-1.2  
uA  
uA  
uA  
V
ICEO  
-
IEBO  
-
VCE(sat)  
VBE(sat)  
-
IC = -500mA, IB = -50 mA  
IC = -500mA, IB = -50 mA  
-
V
807-16  
807-25  
807-40  
100  
160  
250  
250  
400  
600  
hFE(1)  
fT  
V
CE = -1 V, IC = -100 mA  
100  
-
MHz  
VCE = -5 V, IC = -10 mA, f = 100MHz  
01-June-2002 Rev. B  
Page 1 of 2  

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