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BC807-16_12 PDF预览

BC807-16_12

更新时间： 2024-11-21 12:20:35
品牌 Logo 应用领域
TSC 晶体晶体管
页数 文件大小 规格书
2页 340K
描述
0.3 Walts, PNP Plastic-Encasulate Transistor

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BC807-16_12 数据手册

 浏览型号BC807-16_12的Datasheet PDF文件第2页 
BC807-16/-25/40  
0.3 Walts, PNP Plastic-Encasulate Transistor  
SOT-23  
A
F
B
E
Features  
—Ideally suited for automatic insertion  
C
G
—Epitaxial planar die construction  
D
—For switching, AF driver and amplifier applications  
—Complementary NPN type available (BC817)  
—Qualified to AEC-Q10 standards for high reliability  
H
Unit (mm)  
Unit (inch)  
Min Max  
Dimensions  
Min  
2.80  
1.20  
0.30  
1.80  
2.25  
0.90  
Max  
A
B
C
D
E
F
3.00 0.110 0.118  
1.40 0.047 0.055  
0.50 0.012 0.020  
2.00 0.071 0.079  
2.55 0.089 0.100  
1.20 0.035 0.047  
Mechanical Data  
—Case : SOT- 23, Molded plastic  
—Case material: Molded plastic. UL flammability  
classification rating 94V-0  
—Mosture sensitivity: Level 1 per J-STD-020C  
—Terminals: Solderable per MIL-STD-202, Method 208  
—Lead free plating  
G
H
0.550 REF  
0.022 REF  
0.08  
0.19 0.003 0.007  
—Marking: -16: 5A, -25: 5B, -40: 5C  
—Weight: 0.008 grams (approximate)  
Ordering Information  
Suggested PAD Layout  
Packing  
Code  
Part No.  
Package Packing  
0.95  
BC807-16/-25/-40  
BC807-16/-25/-40  
RF  
SOT-23 3K / 7" Reel  
SOT-23 3K / 7" Reel  
0.037  
RFG  
2.0  
0.079  
0.9  
0.035  
0.8  
0.031  
Maximum Ratings  
Rating at 25°C ambient temperature unless otherwise specified.  
Type Number  
Symbol  
VCBO  
VCEO  
IC  
BC807-16  
BC807-25  
-50  
BC807-40  
Units  
V
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector current - continuous  
Power dissipation  
IC= -10μA  
IE=0  
IB=0  
IC= -10mA  
45  
V
-0.5  
A
PD  
0.3  
W
vEBO  
ICBO  
Emitter-Base breakdown voltage  
Collector Cut-off Current  
IE= -1μA  
IC=0  
IE=0  
-5  
V
V
V
CB= -45V  
-0.1  
μA  
μA  
μA  
V
ICEO  
Collector Cut-off Current  
CB= -40V  
IB=0  
-0.2  
IEBO  
Emittor Cut-off Current  
VEB= -4V  
IC=0  
-0.1  
VCE(sat)  
VBE(sat)  
fT  
Collector-Emitter saturation voltage  
Base-Emitter saturation voltage  
IC= -500mA  
IC= -500mA  
IB=50mA  
IB=50mA  
f=100MHz  
-0.7  
-1.2  
V
Transition frequency  
Junction Temperature  
Storage Temperature Range  
Type Number  
VCE= -5V IC= -10mA  
100  
MHz  
°C  
°C  
Units  
TJ  
150  
TSTG  
Symbol  
-55 to + 150  
Min  
100  
160  
250  
Max  
250  
400  
600  
807-16  
807-25  
807-40  
hFE(1)  
DC current gain  
VCE= -1V  
IC= -100mA  
Notes: 1.The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary despending on application.  
Version : C10  
12

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