Datasheet > BC807-16_14

BC807-16_14

更新时间： 2024-11-19 01:09:23

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	153K
描述
0.3 Watts, PNP Plastic-Encasulate Transistor

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数据手册

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BC807-16_14 数据手册

BC807-16/-25/-40

Taiwan Semiconductor

Small Signal Product

0.3 Watts, PNP Plastic-Encasulate Transistor

FEATURES

- Ideally suited for automatic insertion

- Epitaxial planar die construction

- For switching, AF driver and amplifer applications

- Complementary NPN type available (BC817)

MECHANICAL DATA

- Case: SOT- 23, Molded plastic

- Terminal: Solderable per MIL-STD-202, method 208

- Case material: Molded plastic, UL flammability

classification rating 94V-0

- Moisture sensitivity: Level 1 per J-STD-020C

- Lead free plating

SOT-23

- Weight: 0.008grams (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

VALUE

SYMBOL

UNIT

Power Dissipation

P_D

I_C

0.3

-0.5

Collector Current - Continuous

Junction Temperature

T_J

150

°C

Storage Temperature Range

T_STG

-55 to + 150

PARAMETER

I_C= -10 µA I_E= 0

I_C= -10 mA I_B= 0

I_E= -1 µA I_C= 0

VALUE

-50

SYMBOL

V_CBO

UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

V_CEO

-45

V_EBO

-5

V_CB= -45 V I_E= 0

V_CB= -40 V I_B= 0

-0.1

-0.2

-0.1

-0.7

-1.2

µA

I_CBO

Collector Cut-off Current

V_EB= -4 V

I_C= 0

I_EBO

V_CE(sat)

V_BE(sat)

f_T

Emitter Cut-off Current

at I_C= -500mA

at I_C= -500 mA

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

I_B= 50 mA

f = 50MHz

V_CE= -5 V I_C= -10 mA

MHz

807-16

807-25

807-40

100

160

250

400

600

V_CE= -1 V I_C= -100 mA

h_FE(1)

DC Current Gain

Version: F14

Document Number: DS_S1404007

12 3 4 5

中文翻译

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