BC807-16-7

更新时间： 2024-11-17 22:27:23

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
3页	61K
描述
PNP SURFACE MOUNT TRANSISTOR

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中文翻译

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数据手册
替代型号

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BC807-16-7 数据手册

BC807-16/ -25/ -40

PNP SURFACE MOUNT TRANSISTOR

Features

SOT-23

ꢁ

Ideally Suited for Automatic Insertion

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.85

0ꢂ

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.80

8ꢂ

Epitaxial Planar Die Construction

For Switching, AF Driver and Amplifier

Applications

ꢁ

Complementary NPN Types Available (BC817)

Mechanical Data

ꢁ

Case: SOT-23, Molded Plastic

TOP VIEW

Case material - UL Flammability Rating

Classification 94V-0

ꢁ

Moisture sensitivity: Level 1 perJ-STD-020A

Terminals: Solderable per MIL-STD-202,

Method 208

ꢁ

Pin Connections: See Diagram

Marking (See Page 3): BC807-16 5A, K5A

BC807-25 5B, K5B

BC807-40 5C,K5C

All Dimensions in mm

ꢁ

Ordering & Date Code Information: See Page 3

Approx. Weight: 0.008 grams

Maximum Ratings

@ T_A= 25°C unless otherwise specified

Characteristic

Collector-Emitter Voltage

Symbol

V_CEO

V_EBO

I_C

Value

-45

Unit

Emitter-Base Voltage

-5.0

Collector Current

-500

°C/W

°C

I_CM

Peak Collector Current

-1000

310

I_EM

Peak Emitter Current

Power Dissipation at T_SB= 50°C (Note 1)

Thermal Resistance, Junction to Substrate Backside (Note 1)

Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

P_d

R_ꢀJSB

R_ꢀJA

T_j, T_STG

320

403

-65 to +150

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic (Note 2)

Symbol

Min

Typ

Max

Unit

Test Condition

DC Current Gain

Current Gain Group -16

-25

-40

Current Gain Group -16

V_CE= 1.0V, I_C= 100mA

100

160

250

400

600

—

h_FE

—

V_CE= 1.0V, I_C= 300mA

-25

-40

100

170

—

I_C= 500mA, I_B= 50mA

V_CE= 1.0V, I_C= 300mA

V_CE= 45V

V_CE(SAT)

V_BE

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

—

-0.7

-1.2

-100

-5.0

µA

I_CES

I_EBO

f_T

Collector-Emitter Cutoff Current

Emitter-Base Cutoff Current

Gain Bandwidth Product

—

_CE= 25V, T_j= 150°C

V_EB= 4.0V

_CE= 5.0V, I_C= 10mA,

-100

—

MHz

100

—

f = 50MHz

V_CB= 10V, f = 1.0MHz

C_CBO

Collector-Base Capacitance

1. Device mounted on ceramic substrate 0.7mm; 2.5cm area.

Notes:

2. Short duration pulse test used to minimize self-heating effect.

DS11208 Rev. 9 - 2

1 of 3

BC807-16/-25/-40

12 3

中文翻译

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BC807-16-7 替代型号

型号	品牌	替代类型	描述	数据表
BC807-16-7-F	DIODES	完全替代	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, GREEN,

与BC807-16-7相关器件

型号	品牌	获取价格	描述	数据表
BC807-16-7-F	BL Galaxy Electrical	获取价格	PNP SURFACE MOUNT TRANSISTOR
BC807-16-7-F	DIODES	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, GREEN,
BC807-16-AU	PANJIT	获取价格	SOT-23
BC807-16-B0RFG	TSC	获取价格	0.3 Watts, PNP Plastic-Encasulate Transistor
BC807-16-D0RFG	TSC	获取价格	0.3 Watts, PNP Plastic-Encasulate Transistor
BC807-16D87Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 1.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23,
BC807-16E6327	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
BC80716E6327HTSA1	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
BC807-16E6433	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
BC80716E6433TR	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO

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