Datasheet > BC807-16-G

BC807-16-G

更新时间： 2025-08-27 01:13:35

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上华 - COMCHIP		/
页数	文件大小	规格书
5页	169K
描述
General Purpose Transistors

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中文翻译

获取价格

数据手册

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BC807-16-G 数据手册

General Purpose Transistors

BC807-16-G/25-G/40-G (PNP)

RoHS Device

Features

SOT-23

- Ldeally suited for automatic insertion.

- Epitaxial planar die construction.

- Complementary NPN type available (BC817).

0.119(3.00)

0.110(2.80)

Mechanical data

0.056(1.40)

0.047(1.20)

- Case: SOT-23 Standard package, molded

plastic.

0.006(0.15)

0.002(0.05)

- Terminals: Tin plated, solderable per

MIL-STD-750, method 2026

- Mounting position: Any.

0.083(2.10)

0.066(1.70)

0.044(1.10)

0.035(0.90)

0.103(2.60)

0.086(2.20)

- Weight: 0.008 grams(approx.).

0.006(0.15) max

0.007(0.20) min

Maximum Ratings (at TA=25°C unless otherwise noted)

0.020(0.50)

0.013(0.35)

Symbol

VCBO

VCEO

VEBO

Parameter

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Value

-50

Unit

Dimensions in inches and (millimeter)

Collector

-45

Diagram:

-5

Collector current-continuous

Collector power dissipation

-500

300

Base

Thermal resistance form

junction to ambient

RθJA

417

°C/W

Emitter

Junction temperature range

Storage temperature range

150

°C

TSTG

-55 to +150

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Max

Unit

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

VCBO

VCEO

VEBO

ICBO

IC=-10μA, IE = 0

-50

-45

-5

IC=-10mA, IB=0

IE=-1μA, IC=0

VCB=-45V, IE=0

-0.1

-0.2

-0.1

600

μA

Collector cut-off current

ICEO

VCE=-40V, IB=0

Emitter cut-off current

IEBO

VEB=-4V, IC=0

hFE(1)

hFE(2)

VCE=-1V, IC=-100mA

VCE=-1V, IC=-500mA

IC=-500mA, IB=-50mA

VCE=-5V, IC=-10mA, f=100MHz

100

DC current gain

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

Transition frequency

VCE(sat)

-0.7

-1.2

VBE(sat)

100

MHz

Classification of hFE(1)

Rank

Range

Marking

BC807-16-G

BC807-25-G

160-400

BC807-40-G

250-600

100-250

REV:B

Company reserves the right to improve product design , functions and reliability without notice.

Page 1

QW-BTR27

Comchip Technology CO., LTD.

12 3 4 5

中文翻译

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与BC807-16-G相关器件

型号	品牌	获取价格	描述	数据表
BC807-16-H	FORMOSA	获取价格	Status : Active; Package : SOT-23; Polarity : PNP; VCBOMax.(V) : -50; VCEOMax.(V) : -45; V
BC807-16-Q	DIOTEC	获取价格	Bipolar Transistors
BC807-16-Q	NEXPERIA	获取价格	45 V, 500 mA PNP general-purpose transistorsProduction
BC807-16-Q1	ANBON	获取价格	SOT-23
BC807-16-Q1-H	FORMOSA	获取价格	Status : Active; Package : SOT-23; Polarity : PNP; VCBOMax.(V) : -50; VCEOMax.(V) : -45; V
BC807-16-TAPE-13	NXP	获取价格	TRANSISTOR 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BC807-16-TAPE-7	NXP	获取价格	TRANSISTOR 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BC807-16-TP	MCC	获取价格	PNP Silicon General Purpose Transistors
BC807-16/E8	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 800MA I(C) \| SOT-23
BC807-16/E9	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 800MA I(C) \| SOT-23

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