Datasheet > BC807-16_08

BC807-16_08

更新时间： 2024-11-21 08:49:39

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
4页	339K
描述
General Purpose Transistor

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中文翻译

获取价格

数据手册

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BC807-16_08 数据手册

BC807-16/

BC807-40

BC807-25

COLLECTOR

MARKING DIAGRAM

General Purpose Transistor

PNP Silicon

BASE

SOT-23

EMITTER

( T =25 C unless otherwise noted)

Maximum Ratings

Symbol

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Value

Unit

-45

CEO

-50

CBO

Emitter-Base VOltage

-5.0

500

EBO

Collector Current-Continuous

mAdc

Thermal Characteristics

Characteristics

Total Device Dissipation FR-5 Board

(Note 1.)T =25 C

Derate above 25 C

Symbol

Max

Unit

(1)

mW/ C

225

1.8

C/W

Thermal Resistance, Junction to Ambient

556

Total Device Dissipation Alumina

300

2.4

Substrate, (Note 2.) T =25 C

mW/ C

Derate above 25 C

C/W

Thermal Resistance, Junction to Ambient

Junction and Storage, Temperature

417

J,Tstg

-55 to +150

Device Marking

BC807-17=5A1 , BC807-25=5B1 , BC807-40=5C1

1.FR -5=1.0 x 0.75 x 0.062 in.

2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.

WEITRON

http://www.weitron.com.tw

Rev.A 16-Dec-08

12 3 4

中文翻译

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