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BC807-16 PDF预览

BC807-16

更新时间: 2024-11-18 06:41:39
品牌 Logo 应用领域
RECTRON 晶体小信号双极晶体管
页数 文件大小 规格书
3页 398K
描述
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

BC807-16 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.15
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC807-16 数据手册

 浏览型号BC807-16的Datasheet PDF文件第2页浏览型号BC807-16的Datasheet PDF文件第3页 
BC807-16  
SOT-23 BIPOLAR TRANSISTORS  
TRANSISTOR(PNP)  
FEATURES  
Ldeally suited for automatic insertion  
Epitaxial planar die construction  
*
*
*
Complementary NPN type available(BC817)  
SOT-23  
COLLECTOR  
3
0.055(1.40)  
0.047(1.20)  
BASE  
MECHANICAL DATA  
* Case: Molded plastic  
1
2
EMITTER  
* Epoxy: UL 94V-O rate flame retardant  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
0.006(0.15)  
0.003(0.08)  
0.043(1.10)  
0.035(0.90)  
0.020(0.50)  
0.012(0.30)  
0.004(0.10)  
0.000(0.00)  
* Weight: 0.008 gram  
0.100(2.55)  
0.089(2.25)  
0.020(0.50)  
0.012(0.30)  
1
2
0.019(2.00)  
0.071(1.80)  
0.118(3.00)  
0.110(2.80)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25OC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
3
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )  
CHARACTERISTICS  
Collector-base voltage  
SYMBOL  
VALUE  
-50  
UNITS  
V
CBO  
V
V
Collector-emitter voltage  
V
CEO  
-45  
-5  
Emitter-base voltage  
V
EBO  
V
A
Collector current-continuous  
Collector dissipation  
I
-0.5  
C
0.3  
W
P
C
oC  
Junction and storage temperature  
-55 -150  
TJ,Tstg  
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )  
CHARACTERISTICS  
SYMBOL  
MIN  
-50  
MAX  
-
UNITS  
V
Collector-base breakdown voltage (I = -10µA, I =0)  
V
C
E
CBO  
CEO  
EBO  
Collector-emitter breakdown voltage (I = -10mA, I =0)  
V
-45  
-
V
C
B
Emitter-base breakdown voltage (I = -1µA, I =0)  
V
I
-5  
-
-
V
E
C
Collector cut-off current (V = -45V, I =0)  
-0.1  
µA  
CB  
E
CBO  
CEO  
Collector cut-off current (V = -40V, I =0)  
I
-
-0.2  
µA  
CE  
B
Emitter cut-off current (V = -4V, I =0)  
I
-
100  
-
-0.1  
250  
-0.7  
-1.2  
-
µA  
-
EB  
C
EBO  
DC current gain (V = -1V, I = -100mA)  
h
CE  
C
FE(1)  
Collector-emitter saturation voltage (I = -500mA, I = -50mA)  
V
V
V
C
B
CE(sat)  
BE(sat)  
Base-emitter saturation voltage (I = -500mA, I = -50mA)  
V
-
C
B
100  
MHZ  
Transition frequency (V = -5V, I = -10mA, f= 100MHZ)  
CE  
f
T
C
5A  
MARKING  
NOTE: “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.  
2007-3  

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