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BC68PA,115 PDF预览

BC68PA,115

更新时间: 2024-11-24 15:28:31
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
23页 1148K
描述
20 V, 2 A NPN medium power transistor DFN 3-Pin

BC68PA,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:DFN针数:3
Reach Compliance Code:compliantHTS代码:8541.29.00.75
风险等级:5.79最大集电极电流 (IC):2 A
配置:Single最小直流电流增益 (hFE):85
JESD-609代码:e3湿度敏感等级:1
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):1.65 W子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
标称过渡频率 (fT):40 MHzBase Number Matches:1

BC68PA,115 数据手册

 浏览型号BC68PA,115的Datasheet PDF文件第2页浏览型号BC68PA,115的Datasheet PDF文件第3页浏览型号BC68PA,115的Datasheet PDF文件第4页浏览型号BC68PA,115的Datasheet PDF文件第5页浏览型号BC68PA,115的Datasheet PDF文件第6页浏览型号BC68PA,115的Datasheet PDF文件第7页 
BCP68; BC868; BC68PA  
20 V, 2 A NPN medium power transistors  
Rev. 8 — 18 October 2011  
Product data sheet  
1. Product profile  
1.1 General description  
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.  
Table 1. Product overview  
Type number[1]  
Package  
NXP  
PNP complement  
JEITA  
SC-73  
SC-62  
-
JEDEC  
BCP68  
BC868  
BC68PA  
SOT223  
SOT89  
SOT1061  
-
BCP69  
BC869  
BC69PA  
TO-243  
-
[1] Valid for all available selection groups.  
1.2 Features and benefits  
High current  
Two current gain selections  
High power dissipation capability  
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  
Leadless very small SMD plastic package with medium power capability (SOT1061)  
AEC-Q101 qualified  
1.3 Applications  
Linear voltage regulators  
Power management  
MOSFET drivers  
Amplifiers  
Low-side switches  
Battery-driven devices  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
20  
2
Unit  
V
VCEO  
IC  
collector-emitter voltage open base  
collector current  
-
-
-
-
-
-
A
ICM  
peak collector current  
single pulse; tp 1 ms  
3
A
 
 
 
 
 

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