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BC69-25PAS PDF预览

BC69-25PAS

更新时间: 2024-11-19 11:12:15
品牌 Logo 应用领域
安世 - NEXPERIA 开关光电二极管晶体管
页数 文件大小 规格书
15页 3548K
描述
20 V, 2 A PNP medium power transistorsProduction

BC69-25PAS 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, S-PDSO-N3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.73
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):160JESD-30 代码:S-PDSO-N3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE极性/信道类型:PNP
参考标准:AEC-Q101; IEC-60134表面贴装:YES
端子面层:Tin (Sn)端子形式:NO LEAD
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):140 MHz
Base Number Matches:1

BC69-25PAS 数据手册

 浏览型号BC69-25PAS的Datasheet PDF文件第2页浏览型号BC69-25PAS的Datasheet PDF文件第3页浏览型号BC69-25PAS的Datasheet PDF文件第4页浏览型号BC69-25PAS的Datasheet PDF文件第5页浏览型号BC69-25PAS的Datasheet PDF文件第6页浏览型号BC69-25PAS的Datasheet PDF文件第7页 
BC69PAS series  
20 V, 2 A PNP medium power transistors  
Rev. 1 — 19 June 2015  
Product data sheet  
1. Product profile  
1.1 General description  
PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small  
Surface-Mounted Device (SMD) plastic package with medium power capability and visible  
and solderable side pads.  
NPN complement: BC68PAS series  
1.2 Features and benefits  
High collector current capability  
Three current gain selections  
IC and ICM  
Reduced Printed-Circuit Board (PCB)  
Leadless very small SMD plastic  
area requirements  
package with medium power capability  
Exposed heat sink for excellent thermal Suitable for Automatic Optical  
and electrical conductivity  
Inspection (AOI) of solder joint  
AEC-Q101 qualified  
1.3 Applications  
Linear voltage regulators  
Battery driven devices  
MOSFET drivers  
High-side switches  
Power management  
Amplifiers  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tamb = 25 C unless otherwise specified  
Symbol Parameter Conditions  
collector-emitter voltage open base  
Min Typ Max Unit  
VCEO  
-
-
20  
V
IC  
collector current  
peak collector current  
DC current gain  
-
-
-
-
-
-
2  
A
A
ICM  
hFE  
single pulse; tp 1 ms  
-
3  
[1]  
[1]  
[1]  
VCE = 1 V; IC = 500 mA  
VCE = 1 V; IC = 500 mA  
VCE = 1 V; IC = 500 mA  
85  
100  
160  
375  
250  
375  
hFE selection -16  
hFE selection -25  
[1] Pulse test: tp 300 ms;   0.02.  

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