Datasheet > BC69PAS

BC69PAS

更新时间： 2024-11-18 19:57:47

品牌	Logo	应用领域
恩智浦 - NXP		开关光电二极管晶体管
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15页	878K
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BC69PAS 数据手册

BC69PAS series

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20 V, 2 A PNP medium power transistors

Rev. 1 — 19 June 2015

Product data sheet

1. Product profile

1.1 General description

PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small

Surface-Mounted Device (SMD) plastic package with medium power capability and visible

and solderable side pads.

NPN complement: BC68PAS series

1.2 Features and benefits

 High collector current capability

 Three current gain selections

I_Cand I_CM

 Reduced Printed-Circuit Board (PCB)

 Leadless very small SMD plastic

area requirements

package with medium power capability

 Exposed heat sink for excellent thermal  Suitable for Automatic Optical

and electrical conductivity

Inspection (AOI) of solder joint

 AEC-Q101 qualified

1.3 Applications

 Linear voltage regulators

 Battery driven devices

 MOSFET drivers

 High-side switches

 Power management

 Amplifiers

1.4 Quick reference data

Table 1.

Quick reference data

T_amb= 25 C unless otherwise specified

Symbol Parameter Conditions

collector-emitter voltage open base

Min Typ Max Unit

V_CEO

20

I_C

collector current

peak collector current

DC current gain

2

I_CM

h_FE

single pulse; t_p 1 ms

3

[1]

V_CE= 1 V; I_C= 500 mA

100

160

375

250

375

h_FEselection -16

h_FEselection -25

[1] Pulse test: t_p 300 ms;   0.02.

12 3 4 5 6 7...15

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