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BC68PASX PDF预览

BC68PASX

更新时间: 2024-01-27 16:46:51
品牌 Logo 应用领域
其他 - ETC 开关光电二极管晶体管
页数 文件大小 规格书
13页 3049K
描述
IC TRANS NPN 2A 20V SOT1061

BC68PASX 技术参数

生命周期:Active零件包装代码:DFN
包装说明:SMALL OUTLINE, S-PDSO-N3针数:3
Reach Compliance Code:compliant风险等级:1.57
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):50JESD-30 代码:S-PDSO-N3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN参考标准:AEC-Q101; IEC-60134
表面贴装:YES端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):170 MHzBase Number Matches:1

BC68PASX 数据手册

 浏览型号BC68PASX的Datasheet PDF文件第2页浏览型号BC68PASX的Datasheet PDF文件第3页浏览型号BC68PASX的Datasheet PDF文件第4页浏览型号BC68PASX的Datasheet PDF文件第5页浏览型号BC68PASX的Datasheet PDF文件第6页浏览型号BC68PASX的Datasheet PDF文件第7页 
BC68PAS series  
20 V, 2 A NPN medium power transistors  
Rev. 1 — 19 June 2015  
Product data sheet  
1. Product profile  
1.1 General description  
NPN medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small  
Surface-Mounted Device (SMD) plastic package with medium power capability and visible  
and solderable side pads.  
PNP complement: BC69PAS series  
1.2 Features and benefits  
High collector current capability  
Two current gain selections  
IC and ICM  
Reduced Printed-Circuit Board (PCB)  
Leadless very small SMD plastic  
area requirements  
package with medium power capability  
Exposed heat sink for excellent thermal Suitable for Automatic Optical  
and electrical conductivity  
Inspection (AOI) of solder joint  
AEC-Q101 qualified  
1.3 Applications  
Linear voltage regulators  
Battery driven devices  
MOSFET drivers  
Low-side switches  
Power management  
Amplifiers  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tamb = 25 C unless otherwise specified  
Symbol Parameter Conditions  
VCEO collector-emitter voltage open base  
IC  
Min Typ Max Unit  
-
-
-
-
-
-
20  
2
V
A
A
collector current  
peak collector current  
DC current gain  
-
ICM  
hFE  
single pulse; tp 1 ms  
VCE = 1 V; IC = 500 mA  
VCE = 1 V; IC = 500 mA  
-
3
[1]  
[1]  
85  
160  
375  
375  
hFE selection -25  
[1] Pulse test: tp 300 s;   0.02.  

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