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BC68PA-Q PDF预览

BC68PA-Q

更新时间: 2024-11-21 11:13:11
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
13页 242K
描述
20 V, 2 A NPN medium power transistorsProduction

BC68PA-Q 数据手册

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BC68PA-Q series  
20 V, 2 A NPN medium power transistors  
Rev. 1 — 9 May 2022  
Product data sheet  
1. General description  
NPN medium power transistor in a SOT1061 (DFN2020-3) leadless very small Surface-Mounted  
Device (SMD) plastic package.  
2. Features and benefits  
High collector current capability IC and ICM  
Two current gain selections  
High power dissipation capability  
Exposed heatsink for excellent thermal and electrical conductivity  
Leadless very small SMD plastic package with medium power capability  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
Linear voltage regulators  
MOSFET drivers  
Low-side switches  
Power management  
Amplifiers  
Battery-driven devices  
4. Quick reference data  
Table 1. Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol  
VCEO  
IC  
Parameter  
Conditions  
Min  
Typ  
Max  
20  
2
Unit  
V
collector-emitter voltage  
collector current  
peak collector current  
DC current gain  
BC68PA-Q  
open base  
-
-
-
-
-
-
A
ICM  
single pulse; tp ≤ 1 ms  
VCE =1 V; IC = 500 mA  
3
A
hFE  
[1]  
[1]  
85  
-
-
375  
375  
BC68-25PA-Q  
160  
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02  
 
 
 
 
 

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