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BC617

更新时间: 2024-11-03 22:27:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管达林顿晶体管
页数 文件大小 规格书
5页 146K
描述
NPN Silicon Darlington Transistors (High current gain High collector current)

BC617 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.65
最大集电极电流 (IC):1 A配置:DARLINGTON
最小直流电流增益 (hFE):20000JESD-609代码:e0
最高工作温度:150 °C极性/信道类型:NPN
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)标称过渡频率 (fT):150 MHz
Base Number Matches:1

BC617 数据手册

 浏览型号BC617的Datasheet PDF文件第2页浏览型号BC617的Datasheet PDF文件第3页浏览型号BC617的Datasheet PDF文件第4页浏览型号BC617的Datasheet PDF文件第5页 
NPN Silicon Darlington Transistors  
BC 617  
BC 618  
High current gain  
High collector current  
2
3
1
Package1)  
Type  
Marking  
Ordering Code  
Pin Configuration  
1
2
3
BC 617  
BC 618  
Q62702-C1137  
Q62702-C1138  
C
B
E
TO-92  
Maximum Ratings  
Parameter  
Symbol  
Values  
BC 617  
BC 618  
55  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
CE0  
CB0  
EB0  
40  
50  
V
V
80  
V
12  
I
I
I
I
C
500  
800  
100  
200  
625  
150  
mA  
Peak collector current  
Base current  
CM  
B
Peak base current  
BM  
Total power dissipation, T  
C
=66 ˚C  
Ptot  
mW  
˚C  
Junction temperature  
Tj  
Storage temperature range  
Tstg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient  
Junction - case2)  
R
th JA  
th JC  
200  
135  
K/W  
R
1)  
For detailed information see chapter Package Outlines.  
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.  
2)  
5.91  
Semiconductor Group  
1

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