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BC618 PDF预览

BC618

更新时间: 2024-11-23 22:27:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管达林顿晶体管
页数 文件大小 规格书
6页 153K
描述
Darlington Transistors(NPN Silicon)

BC618 数据手册

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Order this document  
by BC618/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR 1  
BASE  
2
EMITTER 3  
1
2
3
MAXIMUM RATINGS  
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
55  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
CBO  
V
EBO  
80  
12  
Collector Current — Continuous  
I
C
1.0  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to  
Ambient  
R
200  
°C/W  
JA  
Thermal Resistance, Junction to Case  
R
83.3  
°C/W  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
V
55  
80  
12  
50  
50  
50  
Vdc  
Vdc  
(BR)CEO  
(I = 10 mAdc, V  
= 0)  
C
BE  
CollectorBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
V
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
(V = 60 Vdc, V  
I
nAdc  
nAdc  
nAdc  
CES  
CBO  
= 0)  
BE  
CE  
Collector Cutoff Current  
(V = 60 Vdc, I = 0)  
I
CB  
Emitter Cutoff Current  
(V = 10 Vdc, I = 0)  
E
I
EBO  
EB  
C
Motorola, Inc. 1996

BC618 替代型号

型号 品牌 替代类型 描述 数据表
KSP55TA ONSEMI

类似代替

PNP外延硅晶体管
KSP06TA ONSEMI

类似代替

NPN外延硅晶体管
KSP05TA ONSEMI

类似代替

NPN外延硅晶体管

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