BC618RLRM

更新时间： 2024-11-04 13:05:55

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管达林顿晶体管
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6页	212K
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BC618RLRM 数据手册

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SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

COLLECTOR 1

BASE

EMITTER 3

MAXIMUM RATINGS

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

Rating

Symbol

Value

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

Collector Current — Continuous

1.0

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to

Ambient

200

°C/W

Thermal Resistance, Junction to Case

83.3

°C/W

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Collector–Emitter Breakdown Voltage

—

Vdc

(BR)CEO

(I = 10 mAdc, V

C BE

= 0)

Collector–Base Breakdown Voltage

(I = 100 Adc, I = 0)

(BR)CBO

Emitter–Base Breakdown Voltage

(I = 10 Adc, I = 0)

Vdc

(BR)EBO

Collector Cutoff Current

(V = 60 Vdc, V = 0)

nAdc

CES

CE BE

Collector Cutoff Current

(V = 60 Vdc, I = 0)

CBO

Emitter Cutoff Current

(V = 10 Vdc, I = 0)

EBO

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4 5 6

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