5秒后页面跳转
BC559BRL1 PDF预览

BC559BRL1

更新时间: 2024-11-26 03:53:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管
页数 文件大小 规格书
3页 134K
描述
100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN

BC559BRL1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.67其他特性:EUROPEAN PART NUMBER
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):180
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):225
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

BC559BRL1 数据手册

 浏览型号BC559BRL1的Datasheet PDF文件第2页浏览型号BC559BRL1的Datasheet PDF文件第3页 
ON Semiconductort  
Low Noise Transistors  
PNP Silicon  
BC559B, C  
BC560C  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
BC559 BC560  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
–30  
–30  
–45  
–50  
Vdc  
–5.0  
Vdc  
Collector Current — Continuous  
I
C
–100  
mAdc  
1
2
3
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
C
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
COLLECTOR  
1
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
q
JA  
JC  
R
83.3  
q
2
BASE  
3
EMITTER  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I = –10 mAdc, I = 0)  
V
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
BC559  
BC560  
–30  
–45  
C
B
Collector–Base Breakdown Voltage  
(I = –10 µAdc, I = 0)  
V
V
Vdc  
Vdc  
BC559  
BC560  
–30  
–50  
C
E
Emitter–Base Breakdown Voltage  
(I = –10 mAdc, I = 0)  
–5.0  
E
C
Collector Cutoff Current  
(V = –30 Vdc, I = 0)  
I
CBO  
–15  
–5.0  
nAdc  
µAdc  
CB  
E
(V = –30 Vdc, I = 0, T = +125°C)  
CB  
E
A
Emitter Cutoff Current  
(V = –4.0 Vdc, I = 0)  
I
–15  
nAdc  
EBO  
EB  
C
Semiconductor Components Industries, LLC, 2001  
255  
Publication Order Number:  
September, 2001 – Rev. 0  
BC559B/D  

与BC559BRL1相关器件

型号 品牌 获取价格 描述 数据表
BC559BRLRA ONSEMI

获取价格

100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN
BC559BRLRE ONSEMI

获取价格

100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN
BC559BRLRM ONSEMI

获取价格

100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN
BC559BRLRP ONSEMI

获取价格

100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN
BC559B-T/R NXP

获取价格

TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Smal
BC559BTA FAIRCHILD

获取价格

PNP Epitaxial Silicon Transistor
BC559BTA ROCHESTER

获取价格

100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE, TO-92, 3 PIN
BC559BTA ONSEMI

获取价格

PNP Epitaxial Silicon Transistor, 2000-FNFLD
BC559BU FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
BC559BZL1 ONSEMI

获取价格

100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN