Datasheet > BC328

BC328

更新时间： 2024-11-07 06:41:35

品牌	Logo	应用领域
SECOS		晶体晶体管开关
页数	文件大小	规格书
3页	106K
描述
PNP General PurposeTransistor

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中文翻译

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数据手册

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BC328 数据手册

BC327/BC328

PNP General PurposeTransistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

FEATURES

TO-92

Power dissipation

P_{CM : 0.625}

Collector current

I_CM

Collector-base voltage

W Tamb=25

（

℃）

-0.8

V_{(BR)CBO : BC327 -50}

BC328 -30

2 3

Operating and storage junction temperature range

1. COLLECTOR

2. BASE

T^JT^stg: -55

to +150

℃

，

℃

EMITTER

ELECTRICAL CHARACTERISTICS (Tamb=25Я unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

V_CBO

Ic= -100µA , I_E=0

Collector-base breakdown voltage

-50

-30

BC327

BC328

I_C= -10 mA , I_B=0

I_E= -10µA, I_C=0

Collector-emitter breakdown voltage

V_CEO

-45

-25

BC327

BC328

V_EBO

I_CBO

-5

Emitter-base breakdown voltage

Collector cut-off current

_CB= -45V, I_E=0

_CB= -25V, I_E=0

-0.1

µA

BC327

BC328

Collector cut-off current

I_CEO

V_CE= -40V, I_B=0

_CE= -20 V, I_B=0

-0.2

µA

BC327

BC328

I_EBO

V_EB= -4 V, I_C=0

-0.1

630

µA

Emitter cut-off current

DC current gain

h_FE(1)

h_FE(2)

V_CE=-1V, I_C= -100mA

V_CE=-1V, I_C= -300mA

100

V_CE(sat)

V_BE(sat)

I_C=-500 mA, I_B= -50 mA

I_C= -500 mA, I_B=-50 mA

-0.7

-1.2

Collector-emitter saturation voltage

Base-emitter saturation voltage

_CE= -5V, I_C= -10mA

260

MHz

Transition frequency

f _T

f = 100MHz

h_FECLASSIFICATION

Classification

h_FE1

100-250

60-

160-400

100-

250-630

170-

h_FE2

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 3

12 3

中文翻译

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