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BAT54LP-7B PDF预览

BAT54LP-7B

更新时间: 2024-11-21 13:02:35
品牌 Logo 应用领域
美台 - DIODES 整流二极管肖特基二极管
页数 文件大小 规格书
3页 100K
描述
DIODE SCHOTTKY 30V 200MA 2DFN

BAT54LP-7B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:X1-DFN1006-2, 2 PIN
Reach Compliance Code:compliantFactory Lead Time:17 weeks
风险等级:1.72其他特性:HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PBCC-N2
JESD-609代码:e4元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):260
最大功率耗散:0.25 W参考标准:AEC-Q101
最大重复峰值反向电压:30 V最大反向恢复时间:0.05 µs
表面贴装:YES技术:SCHOTTKY
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
Base Number Matches:1

BAT54LP-7B 数据手册

 浏览型号BAT54LP-7B的Datasheet PDF文件第2页浏览型号BAT54LP-7B的Datasheet PDF文件第3页 
BAT54LP  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Low Forward Voltage Drop  
Fast Switching  
Ultra-Small Leadless Surface Mount Package  
PN Junction Guard Ring for Transient and ESD Protection  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
Case: DFN1006-2  
Case Material: Molded Plastic, "Green" Molding Compound. UL  
Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminal Connections: Cathode Dot  
Terminals: Finish - NiPdAu annealed over Copper  
leadframe. Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 2  
Qualified to AEC-Q101 Standards for High Reliability  
Ordering Information: See Page 2  
Weight: 0.001 grams (approximate)  
Bottom View  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
V
Forward Continuous Current  
Repetitive Peak Forward Current  
Forward Surge Current  
200  
300  
600  
mA  
mA  
mA  
IF  
IFRM  
IFSM  
@ t < 1.0s  
Thermal Characteristics  
Characteristic  
Power Dissipation (Note 4)  
Symbol  
PD  
Value  
250  
Unit  
mW  
Thermal Resistance, Junction to Ambient Air (Note 4)  
Operating and Storage Temperature Range  
400  
°C/W  
Rθ  
TJ, TSTG  
JA  
-65 to +125  
°C  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Reverse Breakdown Voltage (Note 3)  
30  
V
V(BR)R  
IR = 100μA  
IF = 0.1mA  
IF = 1mA  
240  
320  
Forward Voltage  
400  
500  
1000  
mV  
IF = 10mA  
IF = 30mA  
IF = 100mA  
VF  
Reverse Leakage Current (Note 3)  
Total Capacitance  
2.0  
10  
IR  
CT  
μA  
pF  
VR = 25V  
VR = 1.0V, f = 1.0MHz  
IF = 10mA through IR = 10mA  
to IR = 1.0mA, RL = 100Ω  
Reverse Recovery Time  
5.0  
ns  
trr  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Short duration pulse test used to minimize self-heating effect.  
4. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
1 of 3  
www.diodes.com  
July 2008  
© Diodes Incorporated  
BAT54LP  
Document number: DS30504 Rev. 11 - 2  

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