BAT54LT1

更新时间： 2024-11-20 22:16:19

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
4页	81K
描述
Schottky Barrier Diodes

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

BAT54LT1 数据手册

Order this document

by BAT54LT1/D

SEMICONDUCTOR TECHNICAL DATA

These Schottky barrier diodes are designed for high speed switching applications,

circuit protection, and voltage clamping. Extremely low forward voltage reduces

conduction loss. Miniature surface mount package is excellent for hand held and

portable applications where space is limited.

Motorola Preferred Device

•

Extremely Fast Switching Speed

Low Forward Voltage — 0.35 Volts (Typ) @ I = 10 mAdc

30 VOLTS

SILICON HOT–CARRIER

DETECTOR AND SWITCHING

DIODES

CATHODE

ANODE

CASE 318–08, STYLE 8

SOT–23 (TO–236AB)

MAXIMUM RATINGS (T = 125°C unless otherwise noted)

Rating

Reverse Voltage

Symbol

Value

Unit

Volts

Forward Power Dissipation

@ T = 25°C

200

2.0

mW/°C

Derate above 25°C

Forward Current (DC)

Junction Temperature

Storage Temperature Range

DEVICE MARKING

BAT54LT1 = JV3

200 Max

125 Max

°C

stg

–55 to +150

°C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

—

Typ

—

Max

—

Unit

Reverse Breakdown Voltage (I = 10 µA)

Volts

(BR)R

Total Capacitance (V = 1.0 V, f = 1.0 MHz)

7.6

0.5

Reverse Leakage (V = 25 V)

—

2.0

0.24

0.5

1.0

5.0

µAdc

Vdc

Forward Voltage (I = 0.1 mAdc)

—

0.22

0.41

0.52

—

Forward Voltage (I = 30 mAdc)

Forward Voltage (I = 100 mAdc)

Reverse Recovery Time

(I = I = 10 mAdc, I

= 1.0 mAdc) Figure 1

R(REC)

Forward Voltage (I = 1.0 mAdc)

—

0.29

0.35

—

0.32

0.40

200

300

600

Vdc

Forward Voltage (I = 10 mAdc)

Forward Current (DC)

mAdc

Repetitive Peak Forward Current

—

FRM

Non–Repetitive Peak Forward Current (t < 1.0 s)

—

FSM

Thermal Clad is a registered trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

5–1

Motorola, Inc. 1997

12 3 4

中文翻译

下载PDF

BAT54LT1 替代型号

型号	品牌	替代类型	描述	数据表
BAT54LT1G	ONSEMI	类似代替	Schottky Barrier Diodes
BAT54-7-F	DIODES	功能相似	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAT54	FAIRCHILD	功能相似	Schottky Diodes

与BAT54LT1相关器件

型号	品牌	获取价格	描述	数据表
BAT54LT1/D	ETC	获取价格	Schottky Barrier Diode
BAT54LT1G	ONSEMI	获取价格	Schottky Barrier Diodes
BAT54LT3G	ONSEMI	获取价格	30 V 肖特基二极管
BAT54M	CJ	获取价格	SCHOTTKY DIODE
BAT54M	BL Galaxy Electrical	获取价格	Surface Mount Schottky Barrier diode
BAT54M	MCC	获取价格	Tape&Reel: 8Kpcs/Reel,;
BAT54M	BL Galaxy Electrical	获取价格	0.2A,30V,Surface Mount Small Signal Schottky Diodes
BAT54M1PT	CHENMKO	获取价格	SCHOTTKY DIODE VOLTAGE 30 Volts CURRENT 0.2 Ampere
BAT54M3T5G	ONSEMI	获取价格	Schottky Barrier Diode
BAT54-MR	ETC	获取价格	DIODE BAT54 MINIREEL 500PCS

与BAT54LT1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

31
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

50

产品中心

服务支持

精选活动

关于我们

帮助中心

BAT54LT1

BAT54LT1 数据手册

BAT54LT1 替代型号

与BAT54LT1相关器件

与BAT54LT1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BAT54LT1

BAT54LT1 数据手册

BAT54LT1 替代型号

与BAT54LT1相关器件

与BAT54LT1相关文章

您还可以找

您在本页遇到什么问题？