Datasheet > BAT54P-AH

BAT54P-AH

更新时间： 2023-12-06 20:09:46

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	157K
描述
肖特基二极管

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中文翻译

获取价格

数据手册

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BAT54P-AH 数据手册

BAT54P-AH

Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

• AEC-Q101 Qualified

• Low forward voltage

• Halogen and Antimony Free(HAF),

RoHS compliant

Anode

Applications

Transparent top view

• Ultra high-speed switching

• Protection circuits

Simplified outline DFN1006-2H and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Reverse Voltage

Symbol

V_R

Value

Unit

Average Rectified Forward Current

Repetitive Peak Forward Current

Peak Forward Surge Current (t_p= 10 ms)

Power Dissipation

I_F(AV)

I_FRM

I_FSM

200

300

600

250

P_D

Junction Temperature

T_J

125

℃

Storage Temperature Range

T_stg

- 65 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Value

400

Unit

Typical Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

℃/W

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min

Max.

Unit

Reverse Breakdown Voltage

at I_R= 10 μA

Forward Voltage

at I_F= 0.1 mA

at I_F= 1 mA

at I_F= 10 mA

at I_F= 30 mA

at I_F= 100 mA

0.24

0.32

0.4

0.5

0.8

V_F

Reverse Current

at V_R= 25 V

I_R

C_T

t_rr

µA

Total Capacitance

at V_R= 1 V, f = 1 MHz

Reverse Recovery Time

at I_F= 10 mA, I_R= 10 mA,I_RR= 0.1 *I_R, R_L= 100 Ω

1 / 3

Dated: 30/01/2023 Rev: 01

12 3

中文翻译

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