BAT54LT3G

更新时间： 2024-11-22 11:01:31

品牌	Logo	应用领域
安森美 - ONSEMI		整流二极管肖特基二极管
页数	文件大小	规格书
4页	81K
描述
30 V 肖特基二极管

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BAT54LT3G 数据手册

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by BAT54LT1/D

SEMICONDUCTOR TECHNICAL DATA

These Schottky barrier diodes are designed for high speed switching applications,

circuit protection, and voltage clamping. Extremely low forward voltage reduces

conduction loss. Miniature surface mount package is excellent for hand held and

portable applications where space is limited.

Motorola Preferred Device

•

Extremely Fast Switching Speed

Low Forward Voltage — 0.35 Volts (Typ) @ I = 10 mAdc

30 VOLTS

SILICON HOT–CARRIER

DETECTOR AND SWITCHING

DIODES

CATHODE

ANODE

CASE 318–08, STYLE 8

SOT–23 (TO–236AB)

MAXIMUM RATINGS (T = 125°C unless otherwise noted)

Rating

Reverse Voltage

Symbol

Value

Unit

Volts

Forward Power Dissipation

@ T = 25°C

200

2.0

mW/°C

Derate above 25°C

Forward Current (DC)

Junction Temperature

Storage Temperature Range

DEVICE MARKING

BAT54LT1 = JV3

200 Max

125 Max

°C

stg

–55 to +150

°C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

—

Typ

—

Max

—

Unit

Reverse Breakdown Voltage (I = 10 µA)

Volts

(BR)R

Total Capacitance (V = 1.0 V, f = 1.0 MHz)

7.6

0.5

Reverse Leakage (V = 25 V)

—

2.0

0.24

0.5

1.0

5.0

µAdc

Vdc

Forward Voltage (I = 0.1 mAdc)

—

0.22

0.41

0.52

—

Forward Voltage (I = 30 mAdc)

Forward Voltage (I = 100 mAdc)

Reverse Recovery Time

(I = I = 10 mAdc, I

= 1.0 mAdc) Figure 1

R(REC)

Forward Voltage (I = 1.0 mAdc)

—

0.29

0.35

—

0.32

0.40

200

300

600

Vdc

Forward Voltage (I = 10 mAdc)

Forward Current (DC)

mAdc

Repetitive Peak Forward Current

—

FRM

Non–Repetitive Peak Forward Current (t < 1.0 s)

—

FSM

Thermal Clad is a registered trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

5–1

Motorola, Inc. 1997

12 3 4

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