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BAT54LT1G PDF预览

BAT54LT1G

更新时间: 2024-11-21 03:59:59
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管测试光电二极管PC快速恢复二极管
页数 文件大小 规格书
4页 48K
描述
Schottky Barrier Diodes

BAT54LT1G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:1 week风险等级:0.79
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:224439Samacsys Pin Count:3
Samacsys Part Category:DiodeSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08Samacsys Released Date:2015-07-23 09:39:02
Is Samacsys:N应用:FAST RECOVERY
最小击穿电压:30 V配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.8 VJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:0.6 A
元件数量:1相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:30 V最大反向电流:2 µA
最大反向恢复时间:0.005 µs反向测试电压:25 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

BAT54LT1G 数据手册

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BAT54LT1  
Preferred Device  
Schottky Barrier Diodes  
These Schottky barrier diodes are designed for high speed switching  
applications, circuit protection, and voltage clamping. Extremely low  
forward voltage reduces conduction loss. Miniature surface mount  
package is excellent for hand held and portable applications where  
space is limited.  
http://onsemi.com  
Extremely Fast Switching Speed  
30 VOLTS  
SILICON HOT−CARRIER  
DETECTOR AND SWITCHING  
DIODES  
Low Forward Voltage − 0.35 Volts (Typ) @ I = 10 mAdc  
F
Pb−Free Package is Available  
3
1
CATHODE  
ANODE  
3
MARKING  
DIAGRAM  
1
3
MAXIMUM RATINGS (T = 125°C unless otherwise noted)  
2
J
JV3 MG  
Rating  
Symbol  
Value  
Unit  
(TO−236AB)  
SOT−23  
CASE 318  
STYLE 8  
G
Reverse Voltage  
V
R
30  
Volts  
1
2
Forward Power Dissipation  
P
F
@ T = 25°C  
200  
2.0  
mW  
mW/°C  
A
JV3  
M
= Device Code  
= Date Code  
= Pb−Free Package  
Derate above 25°C  
Forward Current (DC)  
Junction Temperature  
Storage Temperature Range  
I
200 Max  
mA  
°C  
F
G
(Note: Microdot may be in either location)  
T
55 to +125  
55 to +150  
J
T
stg  
°C  
ORDERING INFORMATION  
Maximum ratings are those values beyond which device damage can oc-  
cur. Maximum ratings applied to the device are individual stress limit val-  
ues (not normal operating conditions) and are not valid simultaneously. If  
these limits are exceeded, device functional operation is not implied, dam-  
age may occur and reliability may be affected.  
Device  
Package  
Shipping  
BAT54LT1  
SOT−23  
3000/Tape & Reel  
BAT54LT1G  
SOT−23  
3000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
© Semiconductor Components Industries, LLC, 2005  
Publication Order Number:  
September, 2005 − Rev. 8  
BAT54LT1/D  

BAT54LT1G 替代型号

型号 品牌 替代类型 描述 数据表
BAT54LT1 ONSEMI

类似代替

Schottky Barrier Diodes
BAT54-7-F DIODES

功能相似

SURFACE MOUNT SCHOTTKY BARRIER DIODE

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