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BAS40S PDF预览

BAS40S

更新时间: 2024-10-29 06:41:27
品牌 Logo 应用领域
RECTRON 整流二极管肖特基二极管光电二极管
页数 文件大小 规格书
3页 110K
描述
SOT-23 SCHOTTKY DIODE

BAS40S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.39Is Samacsys:N
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:2
端子数量:3最高工作温度:150 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):265最大功率耗散:0.35 W
认证状态:Not Qualified最大反向恢复时间:0.005 µs
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BAS40S 数据手册

 浏览型号BAS40S的Datasheet PDF文件第2页浏览型号BAS40S的Datasheet PDF文件第3页 
RECTRON  
TECHNICAL SPECIFICATION  
SEMICONDUCTOR  
BAS40S  
SOT-23 SCHOTTKY DIODE  
FEATURES  
Low Turn-on voltage  
*
*
Fast switching  
SOT-23  
MECHANICAL DATA  
* Case: Molded plastic  
0.055(1.40)  
0.047(1.20)  
* Epoxy: UL 94V-O rate flame retardant  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
0.006(0.15)  
0.003(0.08)  
0.043(1.10)  
0.035(0.90)  
0.020(0.50)  
0.012(0.30)  
0.004(0.10)  
0.000(0.00)  
* Weight: 0.008 gram  
0.100(2.55)  
0.089(2.25)  
0.020(0.50)  
0.012(0.30)  
0.019(2.00)  
0.071(1.80)  
0.118(3.00)  
0.110(2.80)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25OC ambient temperature unless otherwise specified.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )  
RATINGS  
SYMBOL  
VALUE  
40  
UNITS  
DC Voltage  
V
R
V
mA  
mW  
oC  
Forward Continuous Current  
I
200  
F
o
Max. Steady State Power Dissipation @TA=25 C  
Max. Operating Temperature Range  
Storage Temperature Range  
PD  
TJ  
350  
150  
TSTG  
oC  
-55 to +150  
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )  
CHARACTERISTICS SYMBOL  
Reverse breakdown voltage (I =10µA)  
MIN.  
TYP.  
MAX.  
UNITS  
V
V
(BR)R  
40  
-
-
-
-
0.2  
0.38  
1
R
Reverse voltage leakage current (V =50V)  
R
I
µA  
R
Forward voltage (I =1mA)  
F
V
F
-
-
V
(I =40mA)  
F
Diode capacitance (V =0,f=1MHz)  
R
C
t
-
-
-
-
5
D
pF  
nS  
5
Reveres recovery time (I =I =10mA,I =0.1 X I , R =100Ω)  
rr  
F
R
rr  
R
L
2006-3  

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